High-performance AlGaN/GaN HEMTs on silicon substrates

Javorka, P.; Alam, A.; Fox, A.; Marso, Michel; Heuken, M.; Kordoš, P.

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High-performance AlGaN/GaN HEMTs on silicon substrates

Javorka, P.; Alam, A.; Fox, A. et al.

2002 • In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems

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Disciplines :

Electrical & electronics engineering

Identifiers :

UNILU:UL-CONFERENCE-2009-387

Author, co-author :

Javorka, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

Alam, A.; AIXTRON AG, D-52072 Aachen, Germany

Fox, A.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

Marso, Michel ; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

Heuken, M.; AIXTRON AG, D-52072 Aachen, Germany

Kordoš, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

External co-authors :

yes

Language :

English

Title :

High-performance AlGaN/GaN HEMTs on silicon substrates

Publication date :

2002

Event name :

4th Intern. Conf. Advanced Semicon. Dev. & Microsystems

Event date :

2002

Main work title :

Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems

ISBN/EAN :

0-7803-7276-X

Pages :

287-290 (2002)

Available on ORBilu :

since 26 March 2015

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Bibliography

E.M. Chumbes, A.T. Schremer, J.A. Smart, Y. Wang, N.C. MacDonald, D. Hogue, J.J. Komiak, S.J. Lichwala, R.E. Leoni, and J.R. Shealy, IEEE Trans. Elec. Dev. 48, 420 (2001).
P. Javorka, A. Alam, M. Wolter, A. Fox, M. Marso, M. Heuken, H. Lüth, and P. Kordoš, IEEE Elec. Dev. Lett. 23, 4 (2002).
P. Javorka, A. Alam, N. Nastase, M. Marso, H. Hardtdegen, M. Heuken, H. Lüth, and P. Kordoš, Electron. Lett. 37, 1364 (2001).
J. W. Johnson, J. Han, A.G. Baca, R.D. Briggs, R J. Shul, J.R. Wendt, C. Monier, F. Ren, B. Luo, S.N.G. Chu, D. Tsvetkov, V. Dimitriev, and S.J. Pearton, Solid-State Electron. 46, p. 513-523, (2002).