Mikulics, M., Winden, A., Marso, M., Moonshiram, A., Lüth, H., Grützmacher, D., & Hardtdegen, H. (July 2016). Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics. Applied Physics Letters, 109, 041103. doi:10.1063/1.4960007 Peer Reviewed verified by ORBi |
Harzheim, T., Heuermann, H., & Marso, M. (2016). An adaptive biasing method for SRD comb generators. In 2016 German Microwave Conference (GeMiC). IEEE. doi:10.1109/GEMIC.2016.7461613 |
Mikulics, M., Arango, Y. C., Winden, A., Adam, R., Hardtdegen, A., Grützmacher, D., Plinski, E., Gregusova, D., Novak, J., Kordos, P., Moonshiram, A., Marso, M., Sofer, Z., Lüth, H., & Hardtdegen, H. (2016). Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes. Applied Physics Letters, 108, 061107. doi:10.1063/1.4941923 Peer Reviewed verified by ORBi |
Arend, L., Sperber, R., Marso, M., & Krause, J. (2016). Implementing polarization shift keying over satellite – system design and measurement results. International Journal of Satellite Communications and Networking, 34 (2), 211-229. doi:10.1002/sat.1112 Peer reviewed |
Kobou Ngani, P., Hadji-Minaglou, J.-R., Marso, M., & De Jaeger, E. (17 December 2015). A new Single-phase PLL based on the input voltage magnitude estimation [Paper presentation]. International Conference on Electrical Engineering and Computer Sciences, Hong Kong SAR China. |
Kobou Ngani, P., Hadji-Minaglou, J.-R., Marso, M., & De Jaeger, E. (2015). Phase-error correction by single-phase phase-locked loops based on transfer delay. Journal of Electrical & Electronic Systems. doi:10.4172/2332-0796.C1.002 |
Moonshiram, A., & Marso, M. (October 2015). High Gain Patch Antenna for Broadband Applications from 10.1 to 14.2 GHz. NNGT International Journal on Networking and Communication, 4. Peer reviewed |
Moonshiram, A., & Marso, M. (October 2015). Ultra-Broadband Bow-tie Antenna. NNGT International Journal on Networking and Communication, 4. Peer reviewed |
Moonshiram, A., & Marso, M. (October 2015). A Novel Stacked Slotted Bow-Tie Antenna Element at 11.7 GHz. NNGT International Journal on Networking and Communication, 4. Peer reviewed |
Juul, L., Mikulics, M., Marso, M., & Pereira, M. F. (2015). Numerical simulation of high impedance T-match antennas for terahertz photomixers. In Proc. SPIE 9585, Terahertz Emitters, Receivers, and Applications VI, 95850K (August 31, 2015). doi:10.1117/12.2188020 |
Juul, L., Mikulics, M., Pereira, M. F., & Marso, M. (2015). Numerical study of high impedance T-match antennas for terahertz photomixers. Optical and Quantum Electronics, 47, 913-922. doi:10.1007/s11082-014-0048-3 Peer reviewed |
Mikulics, M., Hardtdegen, H., Arango, Y. C., Adam, R., Fox, A., Grützmacher, D., Gregušová, D., Stanček, S., Novák, J., Kordoš, P., Sofer, Z., Juul, L., & Marso, M. (December 2014). Reduction of skin effect losses in double-level-T-gate structure. Applied Physics Letters, 105, 232102. doi:10.1063/1.4903468 Peer Reviewed verified by ORBi |
Kobou Ngani, P., Hadji-Minaglou, J.-R., Marso, M., & Dejaeger, E. (2014). Distributed Harmonic Compensation for Power Quality in Smart Grids. Cahier Scientifique - Revue Technique Luxembourgeoise. |
Marso, M., Mikulics, M., Winden, A., Arango, Y. C., Schäfer, A., Sofer, Z., Grützmacher, D., & Hardtdegen, H. (2014). InGaN nano-LEDs for energy saving optoelectronics. In Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems. doi:10.1109/ASDAM.2014.6998707 |
Trellenkamp, S., Mikulics, M., Winden, A., Arango, Y. C., Moers, J., Marso, M., Grützmacher, D., & Hardtdegen, H. (2014). III-nitride nano-LEDs for single photon lithography. In Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems (pp. 85-88). doi:10.1109/ASDAM.2014.6998652 |
Fox, A., Mikulics, M., Hardtdegen, H., Trellenkamp, S., Arango, Y. C., Grützmacher, D., Sofer, Z., Gregušová, D., Novák, J., Kordoš, P., & Marso, M. (2014). Novel Double-Level-T-Gate Technology. In Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems. doi:10.1109/ASDAM.2014.6998653 |
Arend, L., Sperber, R., Marso, M., & Krause, J. (2014). Polarization shift keying over satellite - Implementation and demonstration in Ku-band. In Advanced Satellite Multimedia Systems Conference and the 13th Signal Processing for Space Communications Workshop (ASMS/SPSC), 2014 7th (pp. 165-169). doi:10.1109/ASMS-SPSC.2014.6934539 Peer reviewed |
Mikulics, M., Hardtdegen, H., Adam, R., Grützmacher, D., Gregušová, D., Novák, J., Kordoš, P., Sofer, Z., Serafini, J., Zhang, J., Sobolewski, R., & Marso, M. (2014). Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures. Semiconductor Science and Technology, 29, 045022. doi:10.1088/0268-1242/29/4/045022 Peer reviewed |
Riess, S., Mikulics, M., Winden, A., Adam, R., Marso, M., Detlev Grützmacher, D., & Hardtdegen, H. (2013). Highly Transparent Conducting Polymer Top Contacts for Future III–Nitride Based Single Photon Emitters. Japanese Journal of Applied Physics, 52, 08JH10-1 - 08JH10-4. doi:10.7567/JJAP.52.08JH10 Peer reviewed |
Fox, A., Mikulics, M., Winden, A., Hardtdegen, H., Gregusova, D., Adam, R., Sobolewski, R., Marso, M., Grützmacher, D., & Kordos, P. (2012). Towards future III-nitride based THz OEICs in the UV range. In ASDAM 2012, The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (pp. 191 - 194). doi:10.1109/ASDAM.2012.6418570 |
Trellenkamp, S., Mikulics, M., Winden, A., Adam, R., Moers, J., Marso, M., Grützmacher, D., & Hardtdegen, H. (2012). Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control. In ASDAM 2012, The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (pp. 223 - 226). doi:10.1109/ASDAM.2012.6418527 |
Juul, L., Mikulics, M., & Marso, M. (2012). Improving output power of terahertz heterodyne photomixer by impedance matching. In ASDAM 2012, The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (pp. 75 - 78). doi:10.1109/ASDAM.2012.6418552 |
Mikulics, M., Fox, A., Marso, M., Grützmacher, D., Donoval, D., & Kordos, P. (2012). Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate. Vacuum, 86 (6), 754 - 756. doi:10.1016/j.vacuum.2011.07.016 Peer Reviewed verified by ORBi |
Mikulics, M., Hardtdegen, H., Winden, A., Fox, A., Marso, M., Sofer, Z., Lüth, H., Grützmacher, D., & Kordos, P. (2012). Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements. Physica Status Solidi C. Current Topics in Solid State Physics, 9 (3-4), 911 - 914. doi:10.1002/pssc.201100408 Peer reviewed |
Mikulics, M., Zhang, J., Sobolewski, R., Adam, R., Juul, L., Marso, M., Winden, A., Hardtdegen, H., Grützmacher, D., & Kordos, P. (2012). GaAs nanowhiskers for femtosecond photodetectors and THz emitters. In ASDAM 2012, The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (pp. 71 - 74). doi:10.1109/ASDAM.2012.6418553 |
Mikulics, M., Hardtdegen, H., Gregušová, D., Sofer, Z., Šimek, P., Trellenkamp, S., Grützmacher, D., Lüth, H., Kordoš, P., & Marso, M. (2012). Non-uniform distribution of induced strain in gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements. Semiconductor Science and Technology, 27 (10), 105008 - 105008. doi:10.1088/0268-1242/27/10/105008 Peer reviewed |
Marso, M. (2011). GaN for THz Sources. In Proceedings of SPIE, vol. 7945, pp. 79450Y-1 - 79450Y-9 (pp. 794501 - 794509). SPIE. doi:10.1117/12.872705 |
Mikulics, M., Kordoš, P., Gregušová, D., Adam, R., Kočan, M., Wu, S., Zhang, J., Sobolewski, R., Grützmacher, D., & Marso, M. (2011). Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System. IEEE Photonics Technology Letters, 23 (17), 1189 - 1191. doi:10.1109/LPT.2011.2157816 Peer Reviewed verified by ORBi |
Lüth, H., Blömers, C., Richter, T., Wensorra, J., Estevez Hernandez, S., Petersen, G., Lepsa, M., Schäpers, T., Marso, M., Indlekofer, M., Calarco, R., Demarina, N., & Grützmacher, D. (2010). Quantum transport in narrow-gap semiconductor nanocolumns. Physica Status Solidi C. Current Topics in Solid State Physics, 7 (2), 386 - 389. doi:10.1002/pssc.200982506 Peer reviewed |
Fox, A., Mikulics, M., Strang, B., Marso, M., Grützmacher, D., & Kordos, P. (2010). Comparison of AlGaN/GaN HFETs and MOSHFETs in prospect of oscillator design. In The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010 (pp. 159 - 162). doi:10.1109/ASDAM.2010.5666328 |
Marso, M. (2010). GaN for THz Sources. In Proceedings of the Eighth International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2010 (pp. 147-154). doi:10.1109/ASDAM.2010.5666326 |
Mikulics, M., Adam, R., Sofer, Z., Hardtdegen, H., Stanček, S., Knobbe, J., Kočan, M., Stejskal, J., Sedmidubský, D., Pavlovič, M., Nečas, V., Grützmacher, D., & Marso, M. (2010). Femtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates. Semiconductor Science and Technology, 25 (7), 75001. doi:10.1088/0268-1242/25/7/075001 Peer reviewed |
Marso, M. (2009). Das Spektrum der elektromagnetischen Strahlung: Technische Nutzung und Herausforderungen. Revue Technique Luxembourgeoise, (4), 36-37. |
Kleine-Ostmann, T., Pierz, K., Hein, G., Dawson, P., Marso, M., & Koch, M. (2009). Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators. Journal of Applied Physics, 105 (9), 093707-1-093707-6. doi:10.1063/1.3122595 Peer reviewed |
Guarino, G., Donaldson, W. R., Mikulics, M., Marso, M., Kordos, P., & Sobolewski, R. (2009). Finite element simulation of metal-semiconductor-metal photodetector. Solid-State Electronics, 53 (10), 1144-1148. doi:10.1016/j.sse.2009.07.001 Peer Reviewed verified by ORBi |
Mikulics, M., Marso, M., Lepsa, M., Grützmacher, D., & Kordos, P. (2009). Output Power Improvement in MSM Photomixers by Modified Finger Contacts Configuration. IEEE Photonics Technology Letters, 21 (3), 146-148. doi:10.1109/LPT.2008.2008202 Peer Reviewed verified by ORBi |
Mikulics, M., Marso, M., Wu, S., Fox, A., Lepsa, M., Grützmacher, D., Sobolewski, R., & Kordoš, P. (15 June 2008). Sensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts. IEEE Photonics Technology Letters, 20 (12), 1054-1056. doi:10.1109/LPT.2008.924184 Peer Reviewed verified by ORBi |
Polenta, L., Rossi, M., Cavallini, A., Calarco, R., Marso, M., Meijers, R., Richter, T., Stoica, T., & Lüth, H. (2008). Investigation on Localized States in GaN Nanowires. ACS Nano, 2, 287-292. doi:10.1021/nn700386w Peer Reviewed verified by ORBi |
Richter, T., Lüth, H., Meijers, R., Calarco, R., & Marso, M. (2008). Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements. Nano Letters, 8 (9), 3056-3059. doi:10.1021/nl8014395 Peer Reviewed verified by ORBi |
Blömers, C., Schäpers, T., Richter, T., Calarco, R., Lüth, H., & Marso, M. (2008). Temperature-dependence of the phase-coherence length in InN nanowires. Applied Physics Letters, 92 (13), 132101-132103. doi:10.1063/1.2905268 Peer reviewed |
Ebbecke, J., Maisch, S., Wixforth, A., Calarco, R., Meijers, R., Marso, M., & Lüth, H. (2008). Acoustic charge transport in GaN nanowires. Nanotechnology, 19 (27), 275708-5. doi:10.1088/0957-4484/19/27/275708 Peer Reviewed verified by ORBi |
Blömers, C., Schäpers, T., Richter, T., Calarco, R., Lüth, H., & Marso, M. (2008). Phase-coherent transport in InN nanowires of various sizes. Physical Review, B 77 (20). doi:10.1103/PhysRevB.77.201301 Peer reviewed |
Kordoš, P., Marso, M., & Mikulics, M. (2007). Performance optimization of GaAs-based photomixers as sources of THz radiation. Applied Physics A : Materials Science & Processing, 87 (3), 563-567. doi:10.1007/s00339-007-3909-9 Peer reviewed |
Hardtdegen, H., Steins, R., Kaluza, N., Cho, Y. S., Wirtz, K., von der Ahe, M., Bay, H. L., Heidelberger, G., & Marso, M. (2007). New approaches for growth control of GaN-based HEMT structure. Applied Physics A : Materials Science & Processing, 87 (3), 491-498. doi:10.1007/s00339-007-3933-9 Peer reviewed |
Calarco, R., & Marso, M. (2007). GaN and InN nanowires grown by MBE: A comparison. Applied Physics A : Materials Science & Processing, 499-503. doi:10.1007/s00339-007-3871-6 Peer reviewed |
Gregušová, D., Stoklas, R., Čičo, K., Heidelberger, G., Marso, M., Kordoš, P., & Novák, J. (2007). Characterization of AlGaN/GaN MOSHFETs with Al2O3 as Gate Oxide. Physica Status Solidi C. Current Topics in Solid State Physics, 4 (2007), 2720-2723. doi:10.1002/pssc.200674828 Peer reviewed |
Marso, M., Heidelberger, G., Indlekofer, K. M., Bernát, J., Fox, A., Kordoš, P., & Lüth, H. (2006). Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs. IEEE Transactions on Electron Devices, 53 (7), 1517-1723. doi:10.1109/TED.2006.875819 Peer Reviewed verified by ORBi |
Cámara Mayorga, I., Muñoz Pradas, P., Michael, E. A., Mikulics, M., Schmitz, A., van der Wal, P., Kaseman, C., Güsten, R., Jacobs, K., Marso, M., Lüth, H., & Kordoš, P. (2006). Terahertz photonic mixers as local oscillators for hot electron bolometer and superconductor-insulator-superconductor astronomical receivers. Journal of Applied Physics, 100, 043116. doi:10.1063/1.2336486 Peer reviewed |
Meijers, R., Richter, T., Calarco, R., Stoica, T., Bochem, H.-P., Marso, M., & Lüth, H. (2006). GaN-nanowhiskers: MBE-growth conditions and optical properties. Journal of Crystal Growth, 289 (1), 381-386. doi:10.1016/j.jcrysgro.2005.11.117 Peer Reviewed verified by ORBi |
Heidelberger, G., Bernát, J., Gregušová, D., Fox, A., Marso, M., Lüth, H., & Kordoš, P. (2006). Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs. Physica Status Solidi A. Applications and Materials Science, 203 (7), 1876-1881. doi:10.1002/pssa.200565249 Peer Reviewed verified by ORBi |
Marso, M., Fox, A., Heidelberger, G., Kordoš, P., & Lüth, H. (2006). Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures. IEEE Electron Device Letters, 27, 945-947. doi:10.1109/LED.2006.886705 Peer reviewed |
Marso, M., Fox, A., Heidelberger, G., Bernát, J., & Lüth, H. (2006). An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure. Physica Status Solidi C. Current Topics in Solid State Physics, 3 (6), 2261-2264. doi:10.1002/pssc.200565127 Peer reviewed |
Mikulics, M., Marso, M., Mantl, S., Lüth, H., & Kordoš, P. (2006). GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation. Applied Physics Letters, 89. doi:10.1063/1.2339907 Peer reviewed |
Fox, A., Marso, M., Heidelberger, G., & Kordoš, P. (2006). RF characterization and modeling of AlGaN/GaN based HFETs and MOSHFETs. In Proc. 6th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’06 (2006). |
Marso, M., Fox, A., Heidelberger, G., Kordos, P., & Lüth, H. (2006). Comparison of AlGaN/GaN MSM varactor diodes based on HFET and MOSHFET layer structures. In Proc. 6th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’06. |
Mikulics, M., Wu, S., Marso, M., Adam, R., Förster, A., van der Hart, A., Kordoš, P., Lüth, H., & Sobolewski, R. (2006). Ultrafast and Highly-Sensitive Photodetectors with Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs. IEEE Photonics Technology Letters, 18 (2006) (5-6), 820-822. doi:10.1109/LPT.2006.871696 Peer Reviewed verified by ORBi |
Mikulics, M., Michael, E. A., Marso, M., Lepsa, M., van der Hart, A., Lüth, H., Dewald, A., Stanček, S., Mozolik, M., & Kordoš, P. (2006). Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs. Applied Physics Letters, 89 (7), 071103. doi:10.1063/1.2337523 Peer reviewed |
Mikulics, M., Michael, E. A., Schieder, R., Stutzki, J., Güsten, R., Marso, M., van der Hart, A., Bochem, H. P., Lüth, H., & Kordoš, P. (2006). Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs. Applied Physics Letters, 88 (4), 041118.1-041118.3. doi:10.1063/1.2168250 Peer reviewed |
Cavallini, A., Polenta, L., Rossi, M., Richter, T., Marso, M., Meijers, R., Calarco, R., & Lüth, H. (2006). Defect Distribution along Single GaN Nanowhiskers. Nano Letters, 6 (7), 1548-1551. doi:10.1021/nl060332n Peer Reviewed verified by ORBi |
Heidelberger, G., Roeckerath, M., Steins, R., Stefaniak, M., Fox, A., Schubert, J., Kaluza, N., Marso, M., Lüth, H., & Kordoš, P. (2006). Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric. Proceedings of 6th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’06, 241-244. |
Mikulics, M., Marso, M., Stanček, S., Michael, E. A., & Kordoš, P. (2006). Terahertz-Radiation Photomixers on Nitrogen-Implanted GaAs, (2006) 117 - 120. Proceedings of 6th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’06. |
Kordoš, P., Bernát, J., Gregušová, D., Marso, M., & Lüth, H. (2006). Impact of surface treatment under the gate on the current collapse of unpassivated AlGaN/GaN heterostructure field-effect transistors. Semiconductor Science and Technology, 21 (2006), 67-71. doi:10.1088/0268-1242/21/1/012 Peer reviewed |
Kordoš, P., Heidelberger, G., Bernát, J., Fox, A., Marso, M., & Lüth, H. (2005). High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors. Applied Physics Letters, 87 (14), 143501-143504. doi:10.1063/1.2058206 Peer reviewed |
Bernát, J., Gregusová, D., Heidelberger, G., Fox, A., Marso, M., Lüth, H., & Kordoš, P. (2005). SiO2 /AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax / fT of 40/24 GHz. Electronics Letters, 41 (11), 667-668. doi:10.1049/el:20050556 Peer reviewed |
Mikulics, M., Marso, M., Cámara Mayorga, I., Güsten, R., Stanček, S., Kováč, P., Wu, S., Khafizov, M., Sobolewski, R., Michael, E. A., Schieder, R., Wolter, M., Buca, D., Förster, A., Kordoš, P., Lüth, H., & Li, X. (2005). Photomixers fabricated on nitrogen-ion-implanted GaAs. Applied Physics Letters, 87 (4), 41106-1-3. doi:10.1063/1.2006983 Peer reviewed |
Michael, E. A., Vowinkel, B., Schieder, R., Mikulics, M., Marso, M., & Kordoš, P. (2005). Large-area traveling-wave photonic mixers for increased continuous terahertz power. Applied Physics Letters, 86 (11), 111120-111123. doi:10.1063/1.1884262 Peer reviewed |
Mikulics, M., Kočan, M., Rizzi, A., Javorka, P., Sofer, Z., Stejskal, J., Marso, M., Kordoš, P., & Lüth, H. (2005). Growth and properties of GaN and AlN layers on silver substrates. Applied Physics Letters, 87, 212109. doi:10.1063/1.2135879 Peer reviewed |
Bernát, J., Pierobon, R., Marso, M., Flynn, J., Brandes, G., Meneghesso, G., Zanoni, E., & Kordoš, P. (2005). Low Current Dispersion and Low Bias-stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs. Physica Status Solidi C. Current Topics in Solid State Physics, 2 (7), 2676-2679. doi:10.1002/pssc.200461304 Peer reviewed |
Mikulics, M., Marso, M., Javorka, P., Kordoš, P., Lüth, H., Kočan, M., Rizzi, A., Wu, S., & Sobolewski, R. (2005). Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN. Applied Physics Letters, 86 (21), 211110. doi:10.1063/1.1938004 Peer reviewed |
Bohn, H. G., & Marso, M. (2005). Wedge-shaped layers from porous silicon: the basics of laterally graded interference filters. Physica Status Solidi A. Applied Research, 202 (8), 1437-1442. doi:10.1002/pssa.200461126 Peer Reviewed verified by ORBi |
Mikulics, M., Adam, R., Marso, M., Forster, A., Kordos, P., Luth, H., Wu, S., Zheng, X., & Sobolewski, R. (2005). Ultrafast Low-Temperature-Grown Epitaxial GaAs Photodetectors Transferred on Flexible Plastic Substrates. IEEE Photonics Technology Letters, 17 (8), 1725-1727. doi:10.1109/LPT.2005.851025 Peer Reviewed verified by ORBi |
Marso, M., Mikulics, M., Adam, R., Wu, S., Zheng, X., Camara, I., Siebel, F., Förster, A., Güsten, R., Kordoš, P., & Sobolewski, R. (2005). Ultrafast Phenomena in Freestanding LT-GaAs Devices. Acta Physica Polonica A, VOL 107; PART 1, 109-117. doi:10.12693/aphyspola.107.109 Peer Reviewed verified by ORBi |
Marso, M., Bernát, J., Javorka, P., Fox, A., & Kordoš, P. (2005). Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors. Physica Status Solidi C. Current Topics in Solid State Physics, 2 (7), 2611-2614. doi:10.1002/pssc.200461325 Peer reviewed |
Gregusova, D., Bernát, J., Drzik, M., Marso, M., Novak, J., Kordoš, P., & Uherek, F. (2005). Influence of passivation-induced stress on the performance of AlGaN/GaN HEMTs. Physica Status Solidi C. Current Topics in Solid State Physics, 2 (7), 2619-2622. doi:10.1002/pssc.200461350 Peer reviewed |
Calarco, R., Marso, M., Richter, T., Aykanat, A. I., Meijers, R., v.d.Hart, A., Stoica, T., & Lüth, H. (2005). Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires. Nano Letters, 5 (5), 981-984. doi:10.1021/nl0500306 Peer Reviewed verified by ORBi |
Marso, M., Bernát, J., Javorka, P., & Kordoš, P. (2004). Influence of a carrier supply layer on carrier density and drift mobility of AlGaN/GaN/SiC high-electron-mobility transistors. Applied Physics Letters, 84 (2004), 2928. doi:10.1063/1.1704854 Peer reviewed |
Bernát, J., Javorka, P., Fox, A., Marso, M., & Kordoš, P. (2004). Influence of layer structure on performance of AlGaN/GaN High Electron Mobility Transistors before and after passivation. Journal of Electronic Materials, 33 ((2004)), 436-439. doi:10.1007/s11664-004-0198-3 Peer reviewed |
Mikulics, M., Wolter, M. J., Marso, M., Camara, I., Stanček, S., Wu, S., Buca, D., Sobolewski, R., Kováč, P., Güsten, R., Lüth, H., & Kordoš, P. (2004). Nitrogen implanted GaAs for ultrafast photodetectors and photomixers. In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (pp. 53-56). |
Bernát, J., Marso, M., Fox, A., Kordoš, P., & Lüth, H. (2004). DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 passivation. In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (pp. 139-142). |
Bernát, J., Wolter, M., Fox, A., Marso, M., Flynn, J., Brandes, G., & Kordoš, P. (2004). Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs. Electronics Letters, 40 (1), 78-80. doi:10.1049/el:20040021 Peer reviewed |
Adam, R., Mikulics, M., Wu, S., Zheng, X., Marso, M., Camara, I., Siebel, F., Güsten, R., Förster, A., Kordoš, P., & Sobolewski, R. (2004). Fabrication and performance of hybrid photoconductive devices based on freestanding LT-GaAs, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII. Proceedings of SPIE, 5353 (2004), 321-332. |
Bernát, J., Wolter, M., Javorka, P., Fox, A., Marso, M., & Kordoš, P. (2004). Performance of unpassivated AlGaN/GaN/SiC HEMTs after short-term electrical bias stress. Solid-State Electronics, 48 ((2004)), 1825-1828. doi:10.1016/j.sse.2004.05.020 Peer Reviewed verified by ORBi |
Marso, M., Wolter, M., & Kordoš, P. (2004). A novel two-color photodetector based on an InAlAs-InGaAs HEMT layer structure. IEEE Photonics Technology Letters, 16 (2004) (11), 2541-2543. doi:10.1109/LPT.2004.834909 Peer Reviewed verified by ORBi |
Calarco, R., Marso, M., Meijers, R., Richter, T., Aykanat, A. I., Stoica, T., & Lüth, H. (2004). GaN Nanocolumns on Si(111) Grown b Molecular Beam Epitaxy. In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (pp. 9-12). |
Marso, M., Bernát, J., Javorka, P., Fox, A., Wolter, M., & Kordoš, P. (2004). MSM varactor diodes based on AlGaN/GaN/SiC HEMT layer structures. In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (pp. 151-154). |
Fox, A., Marso, M., Bernát, J., Javorka, P., & Kordoš, P. (2004). Influence of doping density on small and large signal characteristics of AlGaN/GaN/SiC HEMTs. In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (pp. 147-150). |
Mikulics, M., Camara, I., Marso, M., van der Hart, A., Fox, A., Förster, A., Güsten, R., Lüth, H., & Kordoš, P. (2004). Generation of 1 THz radiation by photomixing in low-temperature-grown MBE GaAs. In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (pp. 231 – 234). |
Moers, J., Trellenkamp, S., Marso, M., v.d.Hart, A., Mantl, S., Lüth, H., & Kordoš, P. (2004). Vertical Double-Gate MOSFETs. In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (pp. 215-218). |
Mayorga, I. C., Mikulics, M., Schmitz, A., Van der Wal, P., Guesten, R., Marso, M., Kordoš, P., & Lüth, H. (2004). An optimization of terahertz local oscillators based on LT-GaAs technology. SPIE, 5498 (2004), 537. doi:10.1117/12.551754 |
Michael, E. A., Mikulics, M., Marso, M., Kordos, P., Luth, H., Vowinkel, B., Schieder, R., & Stutzki, J. (2004). Large-area traveling-wave LT-GaAs photomixers for LO application. SPIE, 5498 (2004), 525. doi:10.1117/12.551633 |
Bernát, J., Javorka, P., Fox, A., Marso, M., Lüth, H., & Kordoš, P. (2003). Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs. Solid-State Electronics, 47 ((2003)), 2097-2103. doi:10.1016/S0038-1101(03)00238-7 Peer Reviewed verified by ORBi |
Mikulics, M., Marso, M., Kordoš, P., Stancek, Kovác, Zheng, X., Wu, S., & Sobolewski, R. (2003). Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-implanted GaAs. Applied Physics Letters, 83, 1719-1721. doi:10.1063/1.1606879 Peer reviewed |
Bernat, J., Javorka, P., Marso, M., & Kordos, P. (2003). Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation. Applied Physics Letters, 83 ((2003)), 5455. doi:10.1063/1.1637154 Peer reviewed |
Javorka, P., Alam, A., Marso, M., Wolter, M., Kuzmík, J., Fox, A., Heuken, M., & Kordoš, P. (2003). Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates. Microelectronics Journal, 34, 435-437. doi:10.1016/S0026-2692(03)00067-3 Peer Reviewed verified by ORBi |
Javorka, P., Alam, A., Marso, M., Wolter, M., Fox, A., Heuken, M., & Kordos, P. (2003). Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates. In Proceedings of the MRS Fall Meeting, Boston 2002. |
Marso, M., Javorka, P., Dikme, Y., Kalisch, H., Bernát, J., Schäfer, C., Schineller, B., v.d.Hart, A., Wolter, M., Fox, A., H.Jansen, R., Heuken, M., Kordoš, P., & Lüth, H. (2003). Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate. Physica Status Solidi A. Applications and Materials Science, (1), 179-182. doi:10.1002/pssa.200303457 Peer Reviewed verified by ORBi |
Wolter, M., Marso, M., P.Javorka, J., Bernát, J., Carius, R., Lüth, H., & Kordoš, P. (2003). Investigation of traps in AlGaN/GaN HEMTs on silicon substrate. Physica Status Solidi C. Current Topics in Solid State Physics, (7), 2360-2363. doi:10.1002/pssc.200303535 Peer reviewed |
Marso, M., Wolter, M., Javorka, P., Kordos, P., & Lüth, H. (2003). Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy. Applied Physics Letters, 82. doi:10.1063/1.1540239 Peer reviewed |
Javorka, P., Bernát, J., Fox, A., Marso, M., Luth, H., & Kordoš-, P. (2003). Influence of SiO/sub 2/ and Si/sub 3/N/sub 4/ passivation on AlGaN/GaN/Si HEMT performance. Electronics Letters, 39 ((2003)), 1155-1157. doi:10.1049/el:20030748 Peer reviewed |
Kuzmik, J., Blaho, M., Pogany, D., Gornik, E., Alam, A., Dikme, Y., Heuken, M., Javorka, P., Marso, M., & Kordoš, P. (2003). Backgating high-current and breakdown characterisation of AlGaN/GaN HEMTs on silicon substrates. Proceedings of the ESSDERC 2003. Estoril, Portugal, 319-322. doi:10.1109/ESSDERC.2003.1256878 |
Vitusevich, S. A., Petrychuk, M. V., Klein, N., Danylyuk, S. V., Javorka, P., Marso, M., Kordoš, P., Lüth, H., & Belyaev, A. E. (2003). Peculiarities of low frequency noise in GaN-based high electron mobility transistors. Proceedings of 17th Internat. Conf. Noise and Fluctuations ICNF, 789-793. doi:10.1063/1.1463202 |
Jäger, N. D., Marso, M., Salmeron, M., Weber, E. R., Urban, K., & Ebert, P. (2003). Physics of imaging p-n junctions by scanning tunneling microscopy and spectroscopy. Physical Review. B, Condensed Matter, ((2003)), 165307. doi:10.1103/PhysRevB.67.165307 Peer reviewed |
Goryll, M., Moers, J., Trellenkamp, S., Vescan, L., Marso, M., Kordos, P., & Luth, H. (2003). Wet low-temperature gate oxidation for nanoscale vertical field-effect transistors. Physica E: Low-Dimensional Systems and Nanostructures, 19 (2003), 18-22. doi:10.1016/S1386-9477(03)00287-X Peer reviewed |
Mikulics, M., Siebel, F., Zheng, X., Adam, R., Marso, M., Stüer, H., Sobolewski, R., Güsten, R., & Kordoš, P. (2002). Freestanding LT GaAs as a subpicosecond photoconductive switch and high-voltage photomixer. Abstract book of 4th Symposium on Non-Stoichiometric III-V Compounds, Physik Mikrostrukturierter Halbleiter 27, 43-48. |
Marso, M., Wolter, M., Javorka, P., Alam, A., Fox, A., Heuken, M., Kordoš, P., & Lüth, H. (2002). Investigation of AlGaN/GaN HEMTs on Si substrate using backgating. Physica Status Solidi C. Current Topics in Solid State Physics, (1), 65-68. doi:10.1002/pssc.200390118 Peer reviewed |
Mistele, D., Rotter, T., Bougrioua, Z., Marso, M., Roll, H., Klausing, H., Fedler, F., Semchinova, O. K., Aderhold, J., Moermann, I., & Graul, J. (2002). Influence of Surface Treatments on DC-Performance of GaN-Based HFETs. Physica Status Solidi A. Applications and Materials Science, 194 (2), 452-455. Peer Reviewed verified by ORBi |
Wolter, M., Javorka, P., Marso, M., Fox, A., Carius, R., Alam, A., Heuken, H., Lüth, H., & Kordoš, P. (2002). Photoionization spectroscopy of traps in AlGaN/GaN HEMTs. Journal of Electronic Materials, 31 (12), 1321-1324. Peer reviewed |
Kuzmík, J., Javorka, P., Alam, A., Marso, M., Heuken, M., & Kordoš, P. (2002). Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method. IEEE Transactions on Electron Devices, 49 (8), 1496-1498. doi:10.1109/TED.2002.801430 Peer Reviewed verified by ORBi |
Javorka, P., Alam, A., Marso, M., Wolter, M., Fox, A., Heuken, M., & Kordoš, P. (2002). Fabrication and performance of AlGaN/GaN HEMTs on (111) Si substrates. Physica Status Solidi A. Applications and Materials Science, 194 (2), 472-475. doi:10.1002/1521-396X(200212)194:2<472::AID-PSSA472>3.0.CO;2-F Peer Reviewed verified by ORBi |
Wolter, M., Javorka, P., Marso, M., Fox, A., Carius, R., Alam, A., Heuken, M., Kordoš, P., & Lüth, H. (2002). Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs. Physica Status Solidi C. Current Topics in Solid State Physics, (1), 82-85. Peer reviewed |
Marso, M., Bernát, J., Wolter, M., Javorka, P., Fox, A., & Kordoš, P. (2002). MSM Diodes Based on an AlGaN/GaN HEMT Layer Structure for Varactor and Photodiode Application. In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems (pp. 295-298). |
Wolter, M., Javorka, P., Marso, M., Carius, R., Heuken, H., Lüth, H., & Kordoš, P. (2002). Investigation of current collapse in doped and undoped AlGaN/GaN HEMTs. In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems (pp. 299-302 (2002). |
Javorka, P., Alam, A., Fox, A., Marso, M., Heuken, M., & Kordoš, P. (2002). High-performance AlGaN/GaN HEMTs on silicon substrates. In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems (pp. 287-290 (2002). |
Mikulics, M., Siebel, F., Fox, A., Marso, M., Förster, A., Stüer, H., Schäfer, F., Güsten, R., & Kordoš, P. (2002). Generation of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs. In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems (pp. 129-132 (2002). |
Goryll, M., Moers, J., Trellenkamp, S., Vescan, L., Marso, M., Kordoš, P., & Lüth, H. (2002). Thin low-temperature gate oxides for vertical field-effect transistor. In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems (pp. 275-277). |
Fox, A., Marso, M., Javorka, P., & Kordoš, P. (2002). RF small-signal and power characterization of AlGaN/GaN HEMTs. In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems (pp. 291-294 (2002). |
Kalisch, H., Dikme, Y., Gerstenbrandt, G., Alam, A., Szymakowski, A., Klockenhoff, H., Rieckmann, C., Heuken, M., H.Jansen, R., Javorka, P., Marso, M., Fox, A., Kordoš, P., & Lüth, H. (2002). Growth and characterisation of AlGaN/GaN-HEMTs on silicon substrates. Physica Status Solidi A. Applications and Materials Science, 194 (2), 464-467. Peer Reviewed verified by ORBi |
Javorka, P., Alam, A., Fox, A., Marso, M., Heuken, M., & Kordoš, P. (2002). AlGaN/GaN HEMTs on Silicon Substrates with f¬T of 32/20 GHz and fmax of 27/22 GHz for 0.5/0.7 µm gate length. Electronics Letters, 38 (2002), 288-289. doi:10.1049/el:20020203 Peer reviewed |
Javorka, P., Alam, A., Wolter, M., Fox, A., Marso, M., Heuken, M., Lüth, H., & Kordoš, P. (2002). AlGaN/GaN HEMTs on (111) Silicon Substrates. IEEE Electron Device Letters, 23 (2002), 4-6. doi:10.1109/55.974794 Peer reviewed |
Javorka, P., Alam, A., Marso, M., Wolter, M., Fox, A., Heuken, M., & Kordoš, P. (2002). Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates. Materials Research Society Symposia Proceedings, 743, L9.1.1. doi:10.1557/proc-743-l9.1 |
Kuzmík, J., Javorka, P., Marso, M., & Kordoš. (2002). Annealing of Schottky contacts deposited on dry etched AlGaN/GaN. Semiconductor Science and Technology, 17 ((2002).), 76-L78. doi:10.1088/0268-1242/17/11/103 Peer reviewed |
Wolter, M., Javorka, P., Marso, M., Alam, A., Carius, R., Fox, A., Heuken, M., Lüth, H., & Kordoš, P. (2001). Investigations on the influence of traps in AlGaN/GaN HEMTs. EDMO. |
Marso, M., Javorka, P., Alam, A., Wolter, M., Hardtdegen, H., Fox, A., Heuken, M., Kordoš, P., & Lüth, H. (2001). AlGaN/GaN HEMT Optimization Using the RoundHEMT Technology. Physica Status Solidi A. Applied Research, 188, 199-202. doi:10.1002/1521-396X(200111)188:1<199::AID-PSSA199>3.0.CO;2-U Peer Reviewed verified by ORBi |
Marso, M., Wolter, M., Bernát, J., Javorka, P., Fox, A., & Kordoš, P. (2001). Varactor Diodes based on an AlGaN/GaN HEMT layer structure. EProc. EDMO. |
Moers, J., Trellenkamp, S., Vescan, L., Marso, M., Kordoš, P., & Lüth, H. (2001). Vertical Double-Gate MOSFET Based on Epitaxial Growth. Proceedings of the 31st European Solid State Devices Research Conference, Nürnberg, Germany, 191-194. |
Mikulics, M., Marso, M., Fox, A., Buca, D., Förster, A., & Kordoš, P. (2001). Low-temperature-grown MBE GaAs for terahertz photomixers. EDMO. |
Marso, M., Wolter, M., Arens-Fischer, R., & Lüth, H. (2001). Fabrication of Laterally Displaced Porous Silicon Filters. Thin Solid Films, 382 (2001), 218-221. doi:10.1016/S0040-6090(00)01762-4 Peer Reviewed verified by ORBi |
Marso, M., Wolter, M., Javorka, P., Fox, A., & Kordoš, P. (2001). AlGaN/GaN Varactor Diode for Integration in HEMT Circuits. Electronics Letters, 37 (2001), 1476-1478. doi:10.1049/el:20011007 Peer reviewed |
Javorka, P., Alam, A., Nastase, N., Marso, M., Hardtdegen, H., Heuken, M., Lüth, H., & Kordoš, P. (2001). AlGaN/GaN Round-HEMTs on (111) silicon substrates. Electronics Letters, 37 (2001), 1364-1366. doi:10.1049/el:20010926 Peer reviewed |
Kuzmík, J., Javorka, P., Alam, A., Marso, M., Heuken, M., & Kordoš, P. (2001). Investigation of self-heating effects in AlGaN/GaN HEMTs. Proceedings of EDMO. |
Javorka, P., Wolter, M., Alam, A., Fox, A., Marso, M., Heuken, M., & Kordoš, P. (2001). Optimization of AlGaN/GaN HEMT performance. Proceedings of EDMO. |
Arens-Fischer, R., Krüger, M., Thönissen, M., Ganse, V., Hunkel, D., Marso, M., & Lüth, H. (2000). Formation of Porous Silicon Filter Structures with Different Properties on Small Areas. Journal of Porous Materials, 7 (1/2/3), 223-226. doi:10.1023/a:1009651224071 Peer Reviewed verified by ORBi |
Kordoš, P., Alam, A., Betko, J., Chow, P. P., Heuken, M., Javorka, P., Kočan, M., Marso, M., Morvic, M., & van Hove, J. M. (2000). Material and Device Issues of GaN-based HEMTs. In Proceedings of the 8th International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO) (pp. 61-66). doi:10.1109/EDMO.2000.919030 |
Thönissen, M., Marso, M., Arens-Fischer, R., Hunkel, D., Krüger, M., Ganse, V., Lüth, H., & Theiss, W. (2000). Electrical Control of the Reflectance of Porous Silicon Layers. Journal of Porous Materials, 7 ((1/2/3),), 205-208. doi:10.1023/a:1009642922253 Peer Reviewed verified by ORBi |
Marso, M., Wolter, M., Arens-Fischer, R., Kordos, P., & Lüth, H. (2000). Formation of laterally displaced porous silicon filters using different fabrication methods. In Proceedings of the 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. doi:10.1109/ASDAM.2000.889458 |
Moers, J., Tönnesmann, A., Klaes, D., Vescan, L., v.d.Hart, A., Fox, A., Marso, M., Kordoš, P., & Lüth, H. (2000). Vertical Silicon MOSFETs based on Selective Epitaxial Growth. In Proc. 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems (pp. 67). doi:10.1109/ASDAM.2000.889454 |
Hunkel, D., Marso, M., Butz, R., Arens-Fischer, R., & Lüth, H. (2000). Integrated photometer with porous silicon interference filters. Materials Science and Engineering: A: Structural Materials: Properties, Microstructures and Processing, B69-70 ((2000)), 100-103. doi:10.1016/S0921-5107(99)00404-3 Peer reviewed |
Hodel, U., Orzati, A., Marso, M., Homan, O., Fox, A., Hart, A. V. D., Förster, A., Kordoš, P., & Lüth, H. (2000). A Novel InAlAs/InGaAs Layer Structure for Monolithically Integrated Photoreceiver. Proceedings of 2000 Int. Conf. Indium Phosphide and Related Materials, 466. doi:10.1109/ICIPRM.2000.850334 |
Hunkel, D., Butz, R., Arens-Fischer, R., Marso, M., & Lüth, H. (1999). Interference filters from porous silicon with laterally varying wavelength of reflection. Journal of Luminescence, 80 (1999), 133-136. doi:10.1016/S0022-2313(98)00082-9 Peer Reviewed verified by ORBi |
Schroth, P., Schöning, M. J., Schütz, S., Malkoc, Ü., Steffen, A., Marso, M., Hummel, H. E., Kordoš, P., & Lüth, H. (1999). Coupling of insect antennae to field-effect transistors for biochemical sensing. Electrochimica Acta, 44 (1999), 3821-3826. doi:10.1016/S0013-4686(99)00088-2 Peer Reviewed verified by ORBi |
Moers, J., Klaes, D., Tönnesmann, A., Vescan, L., Wickenhäuser, S., Grabolla, T., Marso, M., Kordoš, P., & Lüth, H. (1999). Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth. Solid-State Electronics, 43 (1999), 529-535. doi:10.1016/S0038-1101(98)00301-3 Peer Reviewed verified by ORBi |
Marso, M., Gersdorf, P., Fox, A., Förster, A., Hodel, U., Lambertini, R., & Kordoš, P. (1999). An InAlAs-InGaAs OPFET with Responsivity Above 200 A/W at 1.3 µm Wavelength. IEEE Photonics Technology Letters, 11, 117-119. doi:10.1109/68.736414 Peer Reviewed verified by ORBi |
Moers, J., Klaes, D., Tönnesmann, A., Vescan, L., Wickenhäuser, S., Marso, M., Kordoš, P., & Lüth, H. (1999). 19 GHz vertical Si p-channel MOSFET. Electronics Letters, 35 (1999), 239-240. doi:10.1049/el:19990138 Peer reviewed |
Kordoš, P., Förster, A., Marso, M., & Rüders, F. (1998). 550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs. Electronics Letters, 34 (1998), 119-120. doi:10.1049/el:19980039 Peer reviewed |
Klaes, D., Moers, J., Tönnesmann, A., Grimm, M., Wickenhäuser, S., Vescan, L., Marso, M., Kordoš, P., & Lüth, H. (1998). Selectively Grown Vertical Si p-MOS Transistor with Reduced Overlap Capacitances. In Proceedings of the 28th European Solid State Devices Research Conference, Bordeaux, France (pp. 568-571). doi:10.1016/S0040-6090(98)01248-6 |
Klaes, D., Moers, J., Tönnesmann, A., Wickenhäuser, S., Vescan, L., Marso, M., Grabolla, T., Grimm, M., & Lüth, H. (1998). Selectively Grown Vertical Si MOS Transistor with Reduced Overlap Capacitances. Thin Solid Films, 336 (1998), 306-308. doi:10.1016/S0040-6090(98)01248-6 Peer Reviewed verified by ORBi |
Kordoš, P., Marso, M., & Luysberg, M. (1998). Conduction in nonstoichiometric molecular-beam epitaxial GaAs grown above the critical thickness. Applied Physics Letters, 72, 1851-1853. doi:10.1063/1.121204 Peer reviewed |
Marso, M., Horstmann, M., Hardtdegen, H., & Kordoš, P. (1998). Optoelectronic D.C. and R.F. behavior of InP/InGaAs Based HEMTs. Solid-State Electronics, 42 (1998), 197-200. doi:10.1016/S0038-1101(97)00228-1 Peer Reviewed verified by ORBi |
Dillmann, F., Marso, M., Hardtdegen, H., Kordoš, P., Lüth, H., Brennemann, A., Tegude, F. J., Kwaspen, J. M. M., & Kaufmann, L. M. F. (1998). PIN-PJBT Integration: A New GaAs Based Optoelectronic Receiver. In Proceedings of the 28th European Solid State Devices Research Conference, Bordeaux, France (pp. 568-571). doi:10.1109/ASDAM.1998.730220 |
Marso, M., Gersdorf, P., Fox, A., Hodel, U., & Kordoš, P. (1998). Investigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses. In Proceedings of the 6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO) (pp. 105-110). |
Tomáška, M., Marso, M., Fox, A., & Kordoš, P. (1998). Microwave Properties of the MSM Photodetectors with 2-DEG. In Proc. 2nd International Conference on Advanced Semiconductor Devices and Microsystems (pp. 295-298). doi:10.1109/ASDAM.1998.730221 |
Marso, M., Horstmann, M., Hardtdegen, H., Kordoš, P., & Lüth, H. (1997). Electrical Behaviour of the InP/InGaAs Based MSM-2DEG Diode. Solid-State Electronics, 41 (1997), 25-31. doi:10.1016/S0038-1101(96)00138-4 Peer Reviewed verified by ORBi |
Horstmann, M., Marso, M., & Kordoš, P. (1997). MSM Photodetectors Based on InP/InGaAs 2DEG Structures, in Optoelectronic Properties of Semiconductors and Superlattices. Gordon and Brerach Science Publishers. |
Kordoš, P., Marso, M., Förster, A., Darmo, J., Betko, J., & Nimtz, G. (1997). Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs. Applied Physics Letters, 71, 1118-1120. doi:10.1063/1.119745 Peer reviewed |
Krüger, M., Berger, M. G., Marso, M., Reetz, W., Eickhoff, T., Loo, R., Vescan, L., Thönissen, M., Lüth, H., Arens-Fischer, R., Hilbrich, S., & Theiss, W. (1997). Color-Sensistive Si-Photodiode Using Porous Silicon Interference Filters. Japanese Journal of Applied Physics, 36 (1997), 24-L26. doi:10.1143/jjap.36.l24 Peer Reviewed verified by ORBi |
Krüger, M., Marso, M., Berger, M. G., Thönissen, M., Billat, S., Loo, R., Reetz, W., Lüth, H., Hilbrich, S., Arens-Fischer, R., & Grosse, P. (1997). Color-Sensitive Photodetector Based on Porous Silicon Superlattices. Thin Solid Films, 297 (1997), 241-244. doi:10.1016/S0040-6090(96)09414-X Peer Reviewed verified by ORBi |
Hardtdegen, H., Marso, M., Horstmann, M., Schimpf, K., Sommer, M., Jacob, G., & Kordoš, P. (1997). Demonstration of Nitrogen Carrier Gas in MOVPE For InP/InGaAs-Based High Frequency and Optoelectronic Integrated Devices. In Proceedings of the 9th International Conference on InP and Related Materials, Hyannis, Massachusetts, USA (pp. 320-323). doi:10.1109/ICIPRM.1997.600142 |
Marso, M., Horstmann, M., Schimpf, K., Muttersbach, J., Hardtdegen, H., Jacob, G., & Kordos, P. (1997). High Bandwidth InP/InGaAs Based MSM-2DEG Diodes For Optoelectronic Application. Proceedings of the 9th International Conference on InP and Related Materials, 494-497. doi:10.1109/ICIPRM.1997.600204 |
Schimpf, K., Sommer, M., Horstmann, M., Hollfelder, M., v.d.Hart, A., Marso, M., Kordoš, P., & Lüth, H. (1997). 0.1 µm T-gate Al-free InP/InGaAs/InP pHEMTs for W-Band Applications Using a Nitrogen Carrier for LP-MOCVD Growth. IEEE Electron Device Letters, 18, 144-146. doi:10.1109/55.563310 Peer reviewed |
Marso, M., Fox, A., Förster, A., Schimpf, K., & Kordos, P. (1997). Optoelectronic DC and RF behaviour of InAlAs/InGaAs based HEMTs at 1.3µm wavelength. Proceedings of 3rd Asia-Pacific Conference on Communications, Sydney, Australia, 546-550. |
Schimpf, K., Horstmann, M., Hardtdegen, H., Marso, M., & Kordoš, P. (1996). Thermionic Field Emission in p-Barrier enhanced InP/InGaAs/InP HEMTs. Electronics Letters, 32 (1996), 2132-2133. doi:10.1049/el:19961439 Peer reviewed |
Horstmann, M., Schimpf, K., Marso, M., Fox, A., & Kordoš, P. (1996). 16 GHz Bandwidth MSM Photodetector and 45/85 GHz fT/fmax HEMT Prepared on an Identical InGaAs/InP Layer Structure. Electronics Letters, 32, 763-764. doi:10.1049/el:19960454 Peer reviewed |
Horstmann, M., Hollfelder, M., Schimpf, K., Lehmann, R., Marso, M., & Kordoš, P. (1996). Simple Realization of a Monolithic Integrated Photoreceiver for 10GBit/s Using an InP/InGaAs Heterostructure. In Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (pp. 215-218). |
Horstmann, M., Hollfelder, M., Muttersbach, J., Schimpf, K., Marso, M., Kordoš, P., & Lüth, H. (1996). Frequency Response of InP/InGaAs MSM Photodetector with Current Transport Along 2DEG. Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany, 211-214. |
Schimpf, K., Hollfelder, M., Horstmann, M., Marso, M., Hardtdegen, H., & Kordoš, P. (1996). 0.2µm T-gate InP/InGaAs/InP pHEMT with InGaP Diffusion Barrier Layer Grown by LP-MOCVD using an N2-Carrier. In Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (pp. 666-669). |
Krüger, M., Berger, M. G., Marso, M., Thönissen, M., Hilbrich, S., Theiß, W., Loo, R., Eickhoff, T., Reetz, W., Grosse, P., & Lüth, H. (1996). Integration of Porous Silicon Interference Filters in Si-Photodiodes. In Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy (pp. 891-894). |
Horstmann, M., Schimpf, K., Marso, M., & Kordoš, P. (1996). Monolithic Integrated Photoreceiver for 10GBit/s Systems Prepared on InGaAs/InP 2DEG Structure. In Proceedings of the International Conference on Telecommunications Istanbul, Turkye (pp. 636-639). |
Horstmann, M., Hardtdegen, H., Schimpf, K., Muttersbach, J., Lehmann, R., Marso, M., & Kordoš, P. (1996). InP-Based Monolithically Integrated Photoreceiver for 4-10Gbit/s Optoelectronic Systems. In Proceedings of the Gallium Arsenide Application Symposium GAAS 96, Paris, France (pp. 3B2). |
Horstmann, M., Marso, M., Muttersbach, J., Schimpf, K., & Kordoš, P. (1996). Responsivity Enhancement of InGaAs Based MSM Photodetectors Using 2DEG Layer Sequence and Semitransparent Electrodes. Electronics Letters, 32, 1613-1614. doi:10.1049/el:19961083 Peer reviewed |
Schimpf, K., Hollfelder, M., Horstmann, M., Marso, M., Hardtdegen, & Kordos, P. (1996). 0.2µm T-gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown By LP-MOCVD Using an N2-carrier. In Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy, 1996. |
Horstmann, M., Marso, M., Schimpf, K., Hardtdegen, H., Hollfelder, M., Kordoš, P., & Novak, J. (1996). InP/GaInAs MSM Photodetector for Simple Integration in HEMT Circuits. Kluver Academic Publishers. |
Horstmann, M., Muttersbach, J., v.d.Hart, A., Schimpf, K., Marso, M., Kordoš, P., & Lüth, H. (1996). Novel MSM-2DEG PD/HEMT Photoreceiver for 10 Gbit/s Operation. In Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy (pp. 773-776). |
Horstmann, M., Marso, M., Fox, A., Rüders, F., Hollfelder, M., Hardtdegen, H., Kordoš, P., & Lüth, H. (1995). InP/InGaAs Photodetector Based on a High Electron Mobility Transistor Layer Structure: Its Response at 1.3 µm wavelength. Applied Physics Letters, 67 (1995), 106-108. doi:10.1063/1.115497 Peer reviewed |
Marso, M., Schimpf, K., Fox, A., v.d.Hart, A., Hardtdegen, H., Hollfelder, M., Kordoš, P., & Lüth, H. (1995). Novel HEMT layout: The RoundHEMT. Electronics Letters, 31 (1995), 589-591. doi:10.1049/el:19950367 Peer reviewed |
Schöning, M. J., Sauke, M., Steffen, A., Marso, M., Kordoš, P., Lüth, H., Kauffmann, F., Erbach, R., & Hoffmann, B. G. (1995). Ion Sensitive Field Effect Transistors with Ultrathin Langmuir-Blodgett Membranes. Sensors and actuators. B, Chemical, 26-27 (1995), 325-328. doi:10.1016/0925-4005(94)01611-K Peer reviewed |
Frohnhoff, S., Marso, M., Berger, M. G., Thönissen, M., Lüth, H., & Münder, H. (1995). An Extended Quantum Model for Porous Silicon Formation. Journal of the Electrochemical Society, 142 (1995), 615-620. doi:10.1149/1.2044110 Peer Reviewed verified by ORBi |
Horstmann, M., Marso, M., Schimpf, K., Rüders, F., v.d.Hart, A., Hollfelder, M., Hardtdegen, H., Kordoš, P., & Lüth, H. (1995). Novel InP/GaInAs Photodetector for Integration in HEMT Circuits. In Proceedings of the 25th European Solid State Devices Research Conference, Den Haag, The Netherlands (pp. 443-446). |
Münder, H., Frohnhoff, S., Berger, M. G., Marso, M., Thönissen, M., Arens-Fischer, R., & Lüth, H. (1995). Extended Quantum Model For Porous Silicon Formation. In Mat. Res. Soc. Symp. Proc. Vol. 358 (pp. 315-320). Materials Research Society. |
Schüppen, A., Marso, M., & Lüth, H. (1994). Overgrown PBT's: Calculations and Measurements. IEEE Transactions on Electron Devices, 41 (1994), 751-760. doi:10.1109/16.285028 Peer Reviewed verified by ORBi |
Marso, M., Horstmann, M., Rüders, F., Hollricher, O., Hardtdegen, H., Kordoš, P., & Lüth, H. (1994). A Novel InP/InGaAs Photodetector Based on a 2DEG layer structure. In Proceedings of the 6th International Conference on InP and Related Compounds, Santa Barbara, California USA (pp. 512-515). |
Schüppen, A., Jebasinski, R., Mantl, S., Marso, M., Lüth, H., Breuer, U., & Holzbrecher, H. (1994). Phosphorus Redistribution During the Formation of Buried CoSi2 Layers by Ion Beam Synthesis. Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 84, 143-147. doi:10.1016/0168-583X(94)95743-6 Peer Reviewed verified by ORBi |
Schüppen, A., Vescan, L., Marso, M., v.d.Hart, A., Lüth, H., & Beneking, H. (1993). Submicrometer Silicon Permeable Base Transistors with Buried CoSi2 Gates. Electronics Letters, 29 (1993), 215-217. doi:10.1049/el:19930146 Peer reviewed |
Kordoš, P., & Marso, M. (1993). Schottky Barriers and Ohmic Contacts on InGaAs, Properties of Lattice-matched and strained InGaAs. EMS Datareviews, (INSPEC IEE London), 131-155. Peer reviewed |
Meyer, R., Hardtdegen, H., Leuther, A., Marso, M., Kordoš, P., & Lüth, H. (1993). Optimization of Strained Ga1-xInxAs/InP Heterostructures Towards High Channel Conductivity for HEMT Application. In Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (pp. 485-488). |
Marso, M., Kordoš, P., Fox, A., Meyer, R., Hardtdegen, H., & Lüth, H. (1993). A Novel InGaAs Schottky-2DEG Diode. In Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (pp. 397-400). |
Kordoš, P., Marso, M., Meyer, R., & Lüth, H. (1992). Schottky Barrier Height Enhancement on n-In0.53Ga0.47As. Journal of Applied Physics, 72 (1992), 2347-2355. doi:10.1063/1.351576 Peer reviewed |
Kordoš, P., Marso, M., Meyer, R., & Lüth, H. (1992). Schottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfacial Layers. IEEE Transactions on Electron Devices, 39 (1992), 1970-1972. doi:10.1109/16.144693 Peer Reviewed verified by ORBi |
Kordoš, P., Marso, M., Fox, A., Hollfelder, M., & Lüth, H. (1992). n-InGaAs Schottky Diode with Current Transport along 2DEG Channel. Electronics Letters, 28 (1992), 1689-1690. doi:10.1049/el:19921074 Peer reviewed |
Kordoš, P., Marso, M., Meyer, R., & Lüth, H. (1992). Enhanced Schottky Barriers on n-In.53Ga.47As Using pInGaAs, GaAs, InP and InGaP Surface layers. In Proceedings of the 4th International Conference on InP and Related Compounds, Newport, Rhode Island, USA (pp. 230-233). |
Kordoš, P., Marso, M., & Lüth, H. (1992). Enhancement of the Schottky Barrier Height on n-InGaAs by Thin InP Interlayers. Journal of Electrical Engineering, 44 (1992), 367-371. Peer Reviewed verified by ORBi |
Marso, M., Zwinge, G., Grützmacher, D., Hergeth, J., & Beneking, H. (1991). GaInAs Camel transistors With Current Gain Above 6 at Room Temperature. Electronics Letters, 27 (1991), 335-337. doi:10.1049/el:19910212 Peer reviewed |
Marso, M., Kordoš, P., Meyer, R., & Lüth, H. (1991). Quasi-Schottky Diodes on (n)In.53Ga.47As With Barrier Heights of 0.6eV. In Proceedings of the the MRS Fall Meeting, Symposium E, Boston, MA, USA (pp. 449-454). |
Kordoš, P., Marso, M., Meyer, R., & Lüth, H. (1991). Barrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique. Electronics Letters, 27 (1991), 1759-1760. doi:10.1049/el:19911094 Peer reviewed |
Marso, M., Zwinge, G., & Beneking, H. (1989). GaInAs Camel Transistors Grown by MOCVD. Electronics Letters, 25 (1989), 1462-1463. doi:10.1049/el:19890976 Peer reviewed |
Marso, M., Chin, A., Bhattacharya, P., & Beneking, H. (1988). GaInAs camel diodes grown by MBE. Proceedings of the 18th European Solid State Device Research Conference (ESSDERC 88), Montpellier, France, 1988, J. de Physique, Colloque C4, suppl. 9, 4-717-C4-720. doi:10.1051/jphyscol:19884151 |
Beneking, H., Cloos, J.-M., Fernholz, G., Marso, M., & Vescan, L. (1987). Low-Noise Bulk Unipolar Devices in Si and GaAs. In Proceedings of the 17th European Solid State Devices Research Conference, Bologna, Italy (pp. 991-994). |
Beneking, H., Vescan, L., Gruhle, A., Cloos, J. M., & Marso, M. (1986). Silicon Bulk Barrier Diodes Fabricated by LPVPE, High Speed Electronics. Springer. |