[en] The influence of n-doping on the electrical transport properties of GaN nanowires is investigated by photoconductivity measurements on wires with different diameters. The electrical transport in nanowires is extremely sensitive to the wire diameter because of the size dependent barrier for surface recombination. This effect is used to determine the doping level of the nanowires and to complete and consolidate our previously developed surface recombination model for GaN nanowires.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-235
Author, co-author :
Richter, T. ; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Lüth, H.; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Meijers, R.; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Calarco, Raffaella; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Marso, Michel ; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Language :
English
Title :
Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements
Publication date :
2008
Journal title :
Nano Letters
ISSN :
1530-6992
Publisher :
American Chemical Society, Washington, United States - District of Columbia
