[en] Vertically integrated III-nitride nano-LEDs designed for operation in the
telecommunication-wavelength range were fabricated and tested in the (p-
GaN/InGaN/n-GaN/sapphire) material system. We found that the band edge
luminescence energy of the nano-LEDs could be engineered by their size and
by the strain interaction with the masked SiO2/GaN substrates; it depends
linearly on the structure size. The results of reliability measurements prove
that our technological process is perfectly suited for long-term operation of
the LEDs without any indication of degradation effects. The presented
technology shows strong potential for future low energy consumption
optoelectronics.
Disciplines :
Electrical & electronics engineering
Author, co-author :
Marso, Michel ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit
Mikulics, Martin; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany
Winden, Andreas
Arango, Y. C.; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany
Schäfer, A.; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany
Sofer, Zdenĕk; Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, 166 28 Prague 6,Czech Republic
Grützmacher, Detlev; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany
