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0.1 µm T-gate Al-free InP/InGaAs/InP pHEMTs for W-Band Applications Using a Nitrogen Carrier for LP-MOCVD Growth
Schimpf, K.; Sommer, M.; Horstmann, M. et al.
1997 • In IEEE Electron Device Letters, 18, p. 144-146

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040_EDL_18_1997_144_146.pdf

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