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Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

Marso, Michel; Javorka, P.; Dikme, Y. et al.

2003 • In Physica Status Solidi A. Applications and Materials Science, (1), p. 179-182

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103_pss_a_200_2003_179_182.pdf

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