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Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs,
Marso, Michel; Heidelberger, Gero; Indlekofer, Klaus Michael et al.
2006 • In IEEE Transactions on Electron Devices, 53 (7), p. 1517-1723

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141_TED_53_2006_1517_1523.pdf

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