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Characterization of AlGaN/GaN MOSHFETs with Al2O3 as Gate Oxide,
Gregušová, D.; Stoklas, R.; Čičo, K. et al.
2007In Physica Status Solidi C. Current Topics in Solid State Physics, 4 (2007), p. 2720-2723

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154_pss_c_4_2007_2720-2723.pdf

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