Reference : The effect of KF post-deposition treatments on the optoelectronic properties of Cu(In...

	Document type :	Scientific journals : Article
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	Focus Areas :	Physics and Materials Science
	To cite this reference:	http://hdl.handle.net/10993/46643

Title :	The effect of KF post-deposition treatments on the optoelectronic properties of Cu(In,Ga)Se2 single crystals
Language :	English
Author, co-author :	Ramirez Sanchez, Omar [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS) >]
	Bertrand, Maud [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit]
	Debot, Alice [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS) >]
	Siopa, Daniel [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS) >]
	Valle, Nathalie [Luxembourg Institute of Science & Technology - LIST > Materials Research and Technology]
	Schmauch, Jörg [Saarland University > Experimental Physics]
	Siebentritt, Susanne [University of Luxembourg > Faculty of Science, Technology and Medicine (FSTM) > Department of Physics and Materials Science (DPHYMS) >]
Publication date :	2021
Journal title :	Solar RRL
Publisher :	Wiley
Peer reviewed :	Yes
Audience :	International
e-ISSN :	2367-198X
City :	Weinheim
Country :	Germany
Keywords :	[en] CIGSe ; single crystals ; alkali post-deposition treatments
Abstract :	[en] The power conversion efficiency boost of Cu(In,Ga)Se2 in the past years has been possible due to the incorporation of heavy alkali atoms. Their addition through post-deposition treatments results in an improvement of the open-circuit voltage, which origin has been associated with grain boundaries. The present work discusses the effect of potassium fluoride post-deposition treatments on the optoelectronic properties of a series of sodium-free Cu(In,Ga)Se2 single crystals with varying Cu and Ga content. Results suggest that improvement of the quasi-Fermi level splitting can be achieved despite the absence of grain boundaries, being greater in low-gallium Cu-poor absorbers. Secondary ion mass spectrometry reveals the presence of potassium inside the bulk of the films, suggesting that transport of potassium can occur through grain interiors. In addition, a type inversion from n to p in KF-treated low-gallium Cu(In,Ga)Se2 is observed, which along a carrier lifetime study demonstrates that potassium can act as a dopant. The fact that potassium by its own can alter the optoelectronic properties of Cu(In,Ga)Se2 single crystals demonstrates that the effect of post-deposition treatments goes beyond grain boundary passivation.
Target :	Researchers ; Students ; General public
Permalink :	http://hdl.handle.net/10993/46643
FnR project :	FnR ; FNR11696002 > Alex Redinger > GRISC > Grain Boundaries In Solar Cells > 01/07/2018 > 31/12/2021 > 2017

	File(s) associated to this reference
	Fulltext file(s): File Commentary Version Size Access Open access KF PDTs on Cu(In,Ga)Se2 single crystals - Accepted.pdf Author preprint 1.75 MB View/Open

All documents in ORBi^lu are protected by a user license.

 

University of Luxembourg Library |  Feedback |  Legal notices Site Map