0.2µm T-gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown By LP-MOCVD Using an N2-carrier

Reference : 0.2µm T-gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown By LP-M...


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20718

Title :	0.2µm T-gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown By LP-MOCVD Using an N2-carrier
Language :	English
Author, co-author :	Schimpf, K. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Hollfelder, M. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Horstmann, M. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Marso, Michel [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Hardtdegen [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Kordos, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Publication date :	1996
Main document title :	Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy, 1996
Peer reviewed :	No
Event name :	26th European Solid State Devices Research Conference, Bologna, Italy, 1996
Event date :	1996
Permalink :	http://hdl.handle.net/10993/20718

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