InP/GaInAs MSM Photodetector for Simple Integration in HEMT Circuits

Reference : InP/GaInAs MSM Photodetector for Simple Integration in HEMT Circuits


	Document type :	Books : Book published as author, translator, etc.
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20717

Title :	InP/GaInAs MSM Photodetector for Simple Integration in HEMT Circuits
Language :	English
Author, co-author :	Horstmann, M. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Marso, Michel [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Schimpf, K. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Hardtdegen, H. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Hollfelder, M. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Kordoš, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Novak, J. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Publication date :	1996
Publisher :	Kluver Academic Publishers
Collection and collection volume :	Heterostructure Epitaxy and Devices
Number of pages :	305 - 308
Permalink :	http://hdl.handle.net/10993/20717

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