Simple Realization of a Monolithic Integrated Photoreceiver for 10GBit/s Using an InP/InGaAs Heterostructure

Reference : Simple Realization of a Monolithic Integrated Photoreceiver for 10GBit/s Using an InP...


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20700

Title :	Simple Realization of a Monolithic Integrated Photoreceiver for 10GBit/s Using an InP/InGaAs Heterostructure
Language :	English
Author, co-author :	Horstmann, M. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Hollfelder, M. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Schimpf, K. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Lehmann, R. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Marso, Michel [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Kordoš, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Publication date :	1996
Main document title :	Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany
Pages :	215-218
Peer reviewed :	No
Event name :	8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany
Event date :	1996
Permalink :	http://hdl.handle.net/10993/20700

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