Demonstration of Nitrogen Carrier Gas in MOVPE For InP/InGaAs-Based High Frequency and Optoelectronic Integrated Devices

Reference : Demonstration of Nitrogen Carrier Gas in MOVPE For InP/InGaAs-Based High Frequency an...


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20697

Title :	Demonstration of Nitrogen Carrier Gas in MOVPE For InP/InGaAs-Based High Frequency and Optoelectronic Integrated Devices
Language :	English
Author, co-author :	Hardtdegen, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Marso, Michel [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Horstmann, M. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Schimpf, K. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Sommer, M. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Jacob, G. [> >]
	Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Publication date :	1997
Main document title :	Proceedings of the 9th International Conference on InP and Related Materials, Hyannis, Massachusetts, USA
Pages :	320-323
Peer reviewed :	No
Event name :	9th International Conference on InP and Related Materials, Hyannis, Massachusetts, USA
Event date :	1997
Permalink :	http://hdl.handle.net/10993/20697

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