Reference : III-nitride nano-LEDs for single photon lithography

	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/18752

Title :	III-nitride nano-LEDs for single photon lithography
Language :	English
Author, co-author :	Trellenkamp, Stefan [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Mikulics, Martin [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Winden, Andreas [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Arango, Y. C. []
	Moers, Jürgen [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Marso, Michel [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
	Grützmacher, Detlev []
	Hardtdegen, Hilde []
Publication date :	Oct-2014
Main document title :	Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems
Pages :	85-88
Peer reviewed :	No
On invitation :	No
Audience :	International
ISBN :	978-1-4799-5474-2
Event name :	10th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM 2014
Event date :	from 20-10-2014 to 22-10-2014
Event organizer :	Slovak University of Technology in Bratislava
Event place (city) :	Smolenice
Event country :	Slovakia
Abstract :	[en] We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano-LEDs depends linearly on the structure size. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long term operation without any indication of degradation effects. This novel technology shows strong potential for a future flexible single photon lithography [1] which is applicable for molecular photonic and electronic circuits.
Permalink :	http://hdl.handle.net/10993/18752

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