Reference : Morphology and strain of self-assembled semipolar GaN quantum dots in (11-22) AlN

	Document type :	Scientific journals : Article
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	To cite this reference:	http://hdl.handle.net/10993/18681

Title :	Morphology and strain of self-assembled semipolar GaN quantum dots in (11-22) AlN
Language :	English
Author, co-author :	Dimitrakopulos, George [Department of Physics, Aristotle University of Thessaloniki]
	Kalesaki, Efterpi [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
	Kioseoglou, Joseph [Department of Physics, Aristotle University of Thessaloniki]
	Kehagias, Thomas [Department of Physics, Aristotle University of Thessaloniki]
	Lotsari, Antiopi [Department of Physics, Aristotle University of Thessaloniki]
	Lahourcade, Lise [CEA-CNRS Group “Nanophysique et Semiconducteurs,” INAC/SP2M/NPSC, CEA-Grenoble]
	Monroy, Eva [CEA-CNRS Group “Nanophysique et Semiconducteurs,” INAC/SP2M/NPSC, CEA-Grenoble]
	Hausler, Ines [Institut für Physik, Humboldt-Universität zu Berlin, AG Kristallographie]
	Kirmse, Holm [Institut für Physik, Humboldt-Universität zu Berlin, AG Kristallographie]
	Neumann, Wolfgang [Institut für Physik, Humboldt-Universität zu Berlin, AG Kristallographie]
	Jurczak, Gregor [Institute of Fundamental Technological Research of the Polish Academy of Sciences]
	Young, Toby David [Institute of Fundamental Technological Research of the Polish Academy of Sciences]
	Dłużewski, Pavel []
	Komninou, Philomela [Department of Physics, Aristotle University of Thessaloniki]
	Karakostas, Theodoros [Department of Physics, Aristotle University of Thessaloniki]
Publication date :	17-Nov-2010
Journal title :	Journal of Applied Physics
Publisher :	American Institute of Physics
Volume :	108
Pages :	104304
Peer reviewed :	Yes (verified by ORBilu)
Audience :	International
ISSN :	0021-8979
City :	Melville
Country :	NY
Abstract :	[en] GaN quantum dots (QDs) grown in semipolar (11-22) AlN by plasma-assisted molecular-beam epitaxy were studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy techniques. The embedded (11-22)-grown QDs exhibited pyramidal or truncated-pyramidal morphology consistent with the symmetry of the nucleating plane, and were delimited by nonpolar and semipolar nanofacets. It was also found that, in addition to the (11-22) surface, QDs nucleated at depressions comprising {10-11} facets. This was justified by ab initio density functional theory calculations showing that such GaN/AlN facets are of lower energy compared to (11-22). Based on quantitative high-resolution TEM strain measurements, the three-dimensional QD strain state was analyzed using finite-element simulations. The internal electrostatic field was then estimated, showing small potential drop along the growth direction, and limited localization at most QD interfaces.
Research centres :	Aristotle University of Thessaloniki
Funders :	European Commission - EC
Name of the research project :	DOTSENSE
Target :	Researchers ; Professionals ; Students ; General public ; Others
Permalink :	http://hdl.handle.net/10993/18681
DOI :	10.1063/1.3506686
Other URL :	http://scitation.aip.org/content/aip/journal/jap/108/10/10.1063/1.3506686
Framework Programme / European Project :	FP7 ; 224212 - DOTSENSE - Group III-nitride quantum dots as optical transducers for chemical sensors

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