Reference : InGaN nano-LEDs for energy saving optoelectronics

	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/18646

Title :	InGaN nano-LEDs for energy saving optoelectronics
Language :	English
Author, co-author :	Marso, Michel [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
	Mikulics, Martin [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Winden, Andreas []
	Arango, Y. C. [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Schäfer, A. [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Sofer, Zdenĕk [Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, 166 28 Prague 6,Czech Republic]
	Grützmacher, Detlev [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Hardtdegen, Hilde []
Publication date :	Oct-2014
Main document title :	Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems
Peer reviewed :	No
On invitation :	No
Audience :	International
ISBN :	978-1-4799-5474-2
Event name :	10th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM 2014
Event date :	from 20-10-2014 to 22-10-2014
Event organizer :	Slovak University of Technology in Bratislava
Event place (city) :	Smolenice
Event country :	Slovakia
Abstract :	[en] Vertically integrated III-nitride nano-LEDs designed for operation in the telecommunication-wavelength range were fabricated and tested in the (p- GaN/InGaN/n-GaN/sapphire) material system. We found that the band edge luminescence energy of the nano-LEDs could be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates; it depends linearly on the structure size. The results of reliability measurements prove that our technological process is perfectly suited for long-term operation of the LEDs without any indication of degradation effects. The presented technology shows strong potential for future low energy consumption optoelectronics.
Target :	Researchers ; Professionals ; Students
Permalink :	http://hdl.handle.net/10993/18646

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