Reduction of skin effect losses in double-level-T-gate structure; ; et al in Applied Physics Letters (2014), 105 We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process ... [more ▼] We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length Lg=200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 um gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of fmax value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions. [less ▲] Detailed reference viewed: 278 (0 UL) The band gap of Cu2ZnSnSe4: Effect of order-disorderRey, Germain ; Redinger, Alex ; Sendler, Jan et alin Applied Physics Letters (2014), 105 Detailed reference viewed: 389 (21 UL) Excitons in a mirror: Formation of “optical bilayers” using MoS2 monolayers on gold substrates; ; Molina-Sanchez, Alejandro et alin Applied Physics Letters (2014), 104 We report coupling of excitons in monolayers of molybdenum disulphide to their mirror image in an underlying gold substrate. Excitons at the direct band gap are little affected by the substrate whereas ... [more ▼] We report coupling of excitons in monolayers of molybdenum disulphide to their mirror image in an underlying gold substrate. Excitons at the direct band gap are little affected by the substrate whereas strongly bound C-excitons associated with a van-Hove singularity change drastically. On quartz substrates only one C-exciton is visible (in the blue) but on gold substrates a strong red-shifted extra resonance in the green is seen. Exciton coupling to its image leads to formation of a “mirror biexciton” with enhanced binding energy. Estimates of this energy shift in an emitter-gold system match experiments well. The absorption spectrum of MoS2 on gold thus resembles a bilayer of MoS2 which has been created by optical coupling. Additional top-mirrors produce an “optical bulk.” [less ▲] Detailed reference viewed: 405 (12 UL) The influence of Se pressure on the electronic properties of CuInSe2 grown under Cu-excessDepredurand, Valérie ; Bertram, Tobias ; Regesch, David et alin Applied Physics Letters (2014), 105 Detailed reference viewed: 292 (11 UL) Metastable defect in CuInSe2 probed by modulated photo current experiments above 390KLuckas, Jennifer Maria ; ; Bertram, Tobias et alin APPLIED PHYSICS LETTERS (2014), 104 Detailed reference viewed: 293 (2 UL) Admittance spectroscopy in kesterite solar cells: Defect signal or circuit responseWeiss, Thomas ; Redinger, Alex ; Luckas, Jennifer Maria et alin Applied Physics Letters (2013) Detailed reference viewed: 310 (7 UL) Magnetization reversal in Nd-Fe-B based nanocomposites as seen by magnetic small-angle neutron scatteringBick, Jens-Peter ; Honecker, Dirk ; Döbrich, Frank et alin Applied Physics Letters (2013), 102(2), 0224151-0224155 We have studied the magnetization-reversal process of a Nd2Fe14B/Fe3B nanocomposite using small-angle neutron scattering. Based on the computation of the autocorrelation function of the spin misalignment ... [more ▼] We have studied the magnetization-reversal process of a Nd2Fe14B/Fe3B nanocomposite using small-angle neutron scattering. Based on the computation of the autocorrelation function of the spin misalignment, we have estimated the characteristic size lC of spin inhomogeneities around the Nd2Fe14B nanoparticles. The quantity lC approaches a constant value of about 12.5 nm ( ∼ average Nd2Fe14B particle radius) at 14 T and takes on a maximum value of about 18.5 nm at the coercive field of −0.55 T. The field dependence of lC can be described by a model that takes into account the convolution relationship between the nuclear and the magnetic microstructure. [less ▲] Detailed reference viewed: 274 (28 UL) Revised structural phase diagram of (Ba0.7Ca0.3TiO3)-(BaZr0.2Ti0.8O3); ; et al in APPLIED PHYSICS LETTERS (2013), 102(9), The temperature-composition phase diagram of barium calcium titanate zirconate (x(Ba0.7Ca0.3TiO3)(1-x)(BaZr0.2Ti0.8O3); BCTZ) has been reinvestigated using high-resolution synchrotron x-ray powder ... [more ▼] The temperature-composition phase diagram of barium calcium titanate zirconate (x(Ba0.7Ca0.3TiO3)(1-x)(BaZr0.2Ti0.8O3); BCTZ) has been reinvestigated using high-resolution synchrotron x-ray powder diffraction. Contrary to previous reports of an unusual rhombohedral-tetragonal phase transition in this system, we have observed an intermediate orthorhombic phase, isostructural to that present in the parent phase, BaTiO3, and we identify the previously assigned T-R transition as a T-O transition. We also observe the O-R transition coalescing with the previously observed triple point, forming a phase convergence region. The implication of the orthorhombic phase in reconciling the exceptional piezoelectric properties with the surrounding phase diagram is discussed. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793400] [less ▲] Detailed reference viewed: 121 (0 UL) On the specific absorption rate of hyperthermia fluidsPerigo, Elio Alberto ; ; in Applied Physics Letters (2013), 103 The specific absorption rate (SAR) concept of hyperthermia ferrofluids is discussed. It is first suggested that SAR can be characterized at the steady state condition, taking into account the heating flow ... [more ▼] The specific absorption rate (SAR) concept of hyperthermia ferrofluids is discussed. It is first suggested that SAR can be characterized at the steady state condition, taking into account the heating flow mechanism from the ferrofluid to the external environment. The temperature dependence of SAR is then addressed, indicating that the influence arises from both magnetic susceptibility and relaxation time of the system. At last, a single equation able to express the temperature versus time profile of a ferrofluid, when SAR is virtually temperature independent, is proposed up to the equilibrium condition. [less ▲] Detailed reference viewed: 238 (2 UL) Detecting ZnSe secondary phase in Cu2ZnSnSe4 by room temperature photoluminescenceDjemour, Rabie ; Mousel, Marina ; Redinger, Alex et alin Applied Physics Letters (2013), 102 Detailed reference viewed: 348 (14 UL) Atom probe study of Cu2ZnSnSe4 thin-films prepared by co-evaporation and post-deposition annealing; ; et al in Applied Physics Letters (2013), 102 Detailed reference viewed: 328 (9 UL) Exchange-stiffness constant of a Nd-Fe-B based nanocomposite determined by magnetic neutron scatteringBick, Jens-Peter ; ; et alin Applied Physics Letters (2013), 103 Detailed reference viewed: 285 (20 UL) Raman analysis of monoclinic Cu2SnS3 thin films; Djemour, Rabie ; Gütay, Levent et alin Applied Physics Letters (2012), 100 Detailed reference viewed: 512 (6 UL) Degradation and passivation of CuInSe2Regesch, David ; Gütay, Levent ; Larsen, Jes K. et alin Applied Physics Letters (2012), 101 Detailed reference viewed: 351 (10 UL) Lone conduction band in Cu2ZnSnSe4Gütay, Levent ; Redinger, Alex ; Djemour, Rabie et alin Applied Physics Letters (2012), 100 Detailed reference viewed: 250 (4 UL) Effect of edge threading dislocations on the electronic structure of InNKalesaki, Efterpi ; ; et alin Applied Physics Letters (2011), 98(7), 072103 The open issue of the n-type conductivity and its correlation to threading dislocations (TDs) in InN is addressed through first principles calculations on the electronic properties of a-edge TDs. All ... [more ▼] The open issue of the n-type conductivity and its correlation to threading dislocations (TDs) in InN is addressed through first principles calculations on the electronic properties of a-edge TDs. All possible dislocation core models are considered (4-, 5/7-, and 8-atom cores) and are found to modify the band structure of InN in a distinct manner. In particular, nitrogen and indium low coordinated atoms in the eight-atom core induce states near the valence band maximum and above the conduction band minimum, respectively. The formation of a nitrogen–nitrogen “wrong” bond is observed at the 5/7-atom core resulting in a state inside the band gap. The 4- and 5/7-atom cores induce occupied states resonant in the conduction band due to In–In strain induced interactions and wrong bonds, respectively. These occupied states designate TDs as a source of higher electron concentrations in InN and provide direct evidence that TDs contribute to its inherent n-type conductivity. [less ▲] Detailed reference viewed: 352 (0 UL) Detection of a ZnSe secondary phase in coevaporated Cu2ZnSnSe4 thin filmsRedinger, Alex ; Hönes, Katja ; et alin Applied Physics Letters (2011), 98(101907), 1019071-1019073 Detailed reference viewed: 231 (3 UL) In-depth resolved Raman scattering analysis for the identification of secondary phases-characterization of Cu2ZnSnS4 layers for solar cell applications; ; et al in Applied Physics Letters (2011), 98(181905), 1819051-1819053 Detailed reference viewed: 237 (2 UL) Influence of secondary phase CuxSe on the optoelectronic quality of chalcopyrite thin filmsLarsen, Jes K. ; Gütay, Levent ; Siebentritt, Susanne ![]() in Applied Physics Letters (2011), 98(201910), 2019101-2019103 Detailed reference viewed: 268 (3 UL) Influence of copper excess on the absorber quality of CulnSe2Gütay, Levent ; Regesch, David ; Larsen, Jes K. et alin Applied Physics Letters (2011), 99(151912), 1519121-15191123 Detailed reference viewed: 172 (17 UL) |
||