Absorber composition: A critical parameter for the effectiveness of heat treatments in chalcopyrite solar cellsSood, Mohit ; Elanzeery, Hossam ; Adeleye, Damilola et alin Progress in Photovoltaics (2020) Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown ... [more ▼] Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown under Cu-poor conditions but not under Cu excess.. We present a systematic study to understand the effects of HT on CuInSe2 and CuInS2 solar cells. The study is performed for CuInSe2 solar cells grown under Cu-rich and Cu-poor chemical potential prepared with both CdS and Zn(O,S) buffer layers. In addition, we also study Cu-rich CuInS2 solar cells prepared with the suitable Zn(O,S) buffer layer. For Cu-poor selenide device low-temperature HT leads to passivation of bulk, whereas in Cu-rich devices no such passivation was observed. The Cu-rich devices are hampered by a large shunt. The HT decreases shunt resistance in Cu-rich selenides, whereas it increases shunt resistance in Cu-rich sulfides.. The origin of these changes in device performance was investigated with capacitance-voltage measurement which shows the considerable decrease in carrier concentration with HT in Cu-poor CuInSe2, and temperature dependent current-voltage measurements show the presence of barrier for minority carriers. Together with numerical simulations, these findings support a highly-doped interfacial p+ layer device model in Cu-rich selenide absorbers and explain the discrepancy between Cu-poor and Curich device performance. Our findings provide insights into how the same treatment can have a completely different effect on the device depending on the composition of the absorber. [less ▲] Detailed reference viewed: 142 (8 UL) Oxidation as Key Mechanism for Efficient Interface Passivation in Cu(In,Ga)Se2 Thin-Film Solar CellsWerner, Florian ; ; Spindler, Conrad et alin Physical Review Applied (2020) Detailed reference viewed: 190 (2 UL) Ultra-thin passivation layers in cu(in,Ga)Se2 thin-film solar cells: full-area passivated front contacts and their impact on bulk dopingWerner, Florian ; ; Melchiorre, Michele et alin Scientific Reports (2020) Detailed reference viewed: 153 (5 UL) Heavy Alkali Treatment of Cu(In,Ga)Se2 Solar Cells: Surface versus Bulk effectsSiebentritt, Susanne ; ; et alin Advanced Energy Materials (2020) Detailed reference viewed: 100 (6 UL) Atmospheric-Pressure Synthesis of Atomically Smooth, Conformal, and Ultrathin Low‑k Polymer Insulating Layers by Plasma-Initiated and Ultrathin Low‑k Polymer Insulating Layers by Plasma-Initiated; ; Werner, Florian et alin ACS Applied Polymer Materials (2020) Detailed reference viewed: 70 (6 UL) Electronic defects in Cu(In,Ga)Se2: Towards a comprehensive modelSpindler, Conrad ; Babbe, Finn ; Wolter, Max et alin Physical Review Materials (2019), 3 Detailed reference viewed: 207 (17 UL) Challenge in Cu-rich CuInSe2 thin film solar cells: Defect caused by etchingElanzeery, Hossam ; Melchiorre, Michele ; Sood, Mohit et alin Physical Review Materials (2019), 3 Detailed reference viewed: 169 (13 UL) Can we see defects in capacitance measurements of thin‐film solar cells ?Werner, Florian ; Babbe, Finn ; Elanzeery, Hossam et alin Progress in Photovoltaics (2019), 27 Detailed reference viewed: 168 (1 UL) High‐performance low bandgap thin film solar cells for tandem applicationsElanzeery, Hossam ; Babbe, Finn ; Melchiorre, Michele et alin Progress in Photovoltaics (2018) Thin film tandem solar cells provide a promising approach to achieve high efficiencies. These tandem cells require at least a bottom low bandgap and an upper high bandgap solar cell. In this contribution ... [more ▼] Thin film tandem solar cells provide a promising approach to achieve high efficiencies. These tandem cells require at least a bottom low bandgap and an upper high bandgap solar cell. In this contribution, 2 high‐performance Cu(In,Ga)Se2 cells with bandgaps as low as 1.04 and 1.07 eV are presented. These cells have shown certified efficiencies of 15.7% and 16.6% respectively. Measuring these cells under a 780‐nm longpass filter, corresponding to the bandgap of a typical top cell in tandem applications (1.57 eV), they achieved efficiencies of 7.9% and 8.3%. Admittance measurements showed no recombination active deep defects. One additional high‐performance CuInSe2 thin film solar cell with bandgap of 0.95 eV and efficiency of 14.1% is presented. All 3 cells have the potential to be integrated as bottom low bandgap cells in thin film tandem applications achieving efficiencies around 24% stacked with an efficient high bandgap top cell. [less ▲] Detailed reference viewed: 232 (6 UL) Interdiffusion and Doping Gradients at the Buffer/Absorber Interface in Thin-Film Solar CellsWerner, Florian ; Babbe, Finn ; Burkhart, Jan et alin ACS Applied Materials and Interfaces (2018), 10 Detailed reference viewed: 149 (9 UL) Buffer Layers, Defects, and the Capacitance Step in the Admittance Spectrum of a Thin-Film Solar CellWerner, Florian ; Siebentritt, Susanne ![]() in Physical Review Applied (2018), 9 Detailed reference viewed: 154 (2 UL) Alkali treatments of Cu(In,Ga)Se2 thin‐film absorbers and their impact on transport barriersWerner, Florian ; Wolter, Max ; Siebentritt, Susanne et alin Progress in Photovoltaics (2018) Detailed reference viewed: 186 (5 UL) Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbersColombara, Diego ; Werner, Florian ; et alin Nature Communications (2018) Detailed reference viewed: 416 (16 UL) Hall measurements on low-mobility thin filmsWerner, Florian ![]() in Journal of Applied Physics (2017), 122 Detailed reference viewed: 179 (5 UL) Improved environmental stability of highly conductive nominally undoped ZnO layers suitable for n-type windows in thin film solar cellsHala, Matej ; ; et alin Solar Energy Materials & Solar Cells (2017), 161 Detailed reference viewed: 325 (13 UL) Space-charge-limited currents in CIS-based solar cellsZelenina, Anastasiya ; Werner, Florian ; Elanzeery, Hossam et alin Applied Physics Letters (2017), 111 Detailed reference viewed: 179 (11 UL) What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se2 ?Werner, Florian ; Bertram, Tobias ; et alin Thin Solid Films (2017), 633 Detailed reference viewed: 212 (9 UL) Environmental stability of highly conductive nominally undoped ZnO layersHala, Matej ; ; et alin IEEE Photovoltaic Specialists Conference. Conference Record (2016), 978-1-5090-2724 Detailed reference viewed: 176 (6 UL) Photoluminescence studies in epitaxial CZTSe thin filmsSendler, Jan ; Thevenin, Maxime ; Werner, Florian et alin Journal of Applied Physics (2016), 120 Detailed reference viewed: 227 (6 UL) Ordering kesterite improves solar cells:A low temperature post-deposition annealing studyRey, Germain ; Weiss, Thomas ; Sendler, Jan et alin Solar Energy Materials & Solar Cells (2016), 151 Detailed reference viewed: 247 (17 UL) |
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