Photoluminescence studies in epitaxial CZTSe thin filmsSendler, Jan ; Thevenin, Maxime ; Werner, Florian et alin Journal of Applied Physics (2016), 120 Detailed reference viewed: 306 (6 UL) Highly conductive ZnO films with high near infrared transparencyHala, Matej ; ; Redinger, Alex et alin Progress in Photovoltaics (2015) We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency ... [more ▼] We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency (RF) biasing of growing ZnO films during their deposition by non-reactive sputtering makes them as conductive as when doped by aluminium (ρ≤1·10−3Ω cm). The films prepared with additional RF biasing possess lower free-carrier concentration and higher free-carrier mobility than Al-doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the near infrared region (NIR). Furthermore, these films exhibit good ambient stability and lower high-temperature stability than the AZO films of the same thickness. We also present the characteristics of Cu(InGa)Se2, CuInSe2 and Cu2ZnSnSe4-based solar cells prepared with the transparent window bilayer formed of the isolating and conductive ZnO films and compare them to their counterparts with a standard ZnO/AZO bilayer. We show that the solar cells with nominally undoped ZnO as their transparent conductive oxide layer exhibit an improved quantum efficiency for λ > 900 nm, which leads to a higher short circuit current density JSC. This aspect is specifically beneficial in preparation of the Cu2ZnSnSe4 solar cells with band gap down to 0.85 eV; our champion device reached a JSC of nearly 39 mAcm−2, an open circuit voltage of 378 mV, and a power conversion efficiency of 8.4 %. [less ▲] Detailed reference viewed: 367 (18 UL) Alternative etchning for improved Cu-rich CuInSe2 solar CellsDepredurand, Valérie ; Bertram, Tobias ; Thevenin, Maxime et alin Materials Research Society Symposia Proceedings (2015), 1771 Detailed reference viewed: 179 (11 UL) The band gap of Cu2ZnSnSe4: Effect of order-disorderRey, Germain ; Redinger, Alex ; Sendler, Jan et alin Applied Physics Letters (2014), 105 Detailed reference viewed: 310 (21 UL) CuInSe2 semiconductor formation by laser annealingMeadows, Helen ; Regesch, David ; Thevenin, Maxime et alin Thin Solid Films (2014) Detailed reference viewed: 198 (2 UL) The Effect of Soft Pre-Annealing of Differently Stacked Cu-Sn-Zn Precursors on the Quality of Cu2ZnSnSe4 AbsorbersArasimowicz, Monika ; Thevenin, Maxime ; Dale, Phillip ![]() in Materials Research Society Symposia Proceedings. (2013), 1538 Detailed reference viewed: 204 (11 UL) |
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