High-speed Electrodeposition of Copper-Tin-Zinc Stacks from Liquid Metal Salts for Cu2ZnSnSe4 Solar CellsSteichen, Marc ; Malaquias, Joao Corujo Branco ; Arasimowicz, Monika et alin Chemmical Communications (2017) Detailed reference viewed: 450 (6 UL) One-step Electrodeposition of Metal Precursors from a Deep Eutectic Solvent for Cu(In,Ga)Se2 Thin Film Solar CellsMalaquias, Joao Corujo Branco ; Steichen, Marc ; Dale, Phillip ![]() in Electrochimica Acta (2015), 151 Detailed reference viewed: 222 (6 UL) Electrochemical deposition as a unique solution processing method for insoluble organic optoelectronic materials†; Berg, Dominik ; Djemour, Rabie et alin Journal of Materials Chemistry C (2014), 2 Detailed reference viewed: 164 (1 UL) Controlled bandgap CuIn1 − xGax(S0.1Se0.9)2 (0.10 ≤ x ≤ 0.72) solar cellsMalaquias, Joao Corujo Branco ; Berg, Dominik ; Sendler, Jan et alin Thin Solid Films (2014) Detailed reference viewed: 156 (7 UL) Semiconductors for Photovoltaic Devices: Electrochemical Approaches using Ionic LiquidsDale, Phillip ; Malaquias, Joao Corujo Branco ; Steichen, Marc ![]() in ECS Transactions (2014), 58(18), 1-12 Can electrodeposition be used to create high quality p-type inorganic compound semiconductors for photovoltaic applications? Thin film photovoltaic devices offer similar power conversion efficiencies to ... [more ▼] Can electrodeposition be used to create high quality p-type inorganic compound semiconductors for photovoltaic applications? Thin film photovoltaic devices offer similar power conversion efficiencies to polycrystalline silicon devices and have the inherent advantages of consisting of less material and requiring less energy expenditure during processing. Thin film devices consist of a semiconductor pn heterojunction with front and back contacts to extract the excited charge carriers. The materials properties of the p-type layer are the most stringent, and determine the overall performance of the device. Common p-type semiconductors are CdTe, Cu(In,Ga)Se2, and Cu2ZnSn(S,Se)4. Typically the p-type semiconductor must form a continuous dense single phase layer two micron thick over metre squared areas. Most commercial producers of thin film photovoltaic modules choose evaporation or sputtering methods to deposit this layer. Of importance is the speed, cost, and quality of deposition. Electrodeposition offers the ability to deposit thin films over large areas with high materials usage, potentially at high speed. Can electrodeposition be used to create high quality p-type inorganic compound semiconductors? This talk will show that it is possible to directly deposit a working p-type semiconductor, but that a two step approach of depositing metals and then annealing them in a reactive atmosphere is a simpler, easier, and more robust approach. Both approaches can lead to semiconductors which provide working photovoltaic devices. However, improvements to the electrodepostion process are still required and the main challenges are outlined below. Challenges in directly electrodepositing a p-type semiconductor are (i) the inherent lack of electrons necessary for a reductive deposition process and (ii) the low thermal energy available at normal deposition temperatures to create micron sized well ordered crystals. Challenges for directly electrodepositing the metal alloys CuInGa or CuSnZn from aqueous solution are (iii) competition with hydrogen reduction leading to inefficient deposition, embrittlement, and dendritic growth (iv) control of the alloy composition over the micrometer and centimeter length scales due to the different reduction potentials, nucleation densities, and diffusion coefficients. In this talk it will be shown how these challenges can be met by using ionic liquids to replace aqueous solvents. Ionic liquids offer larger electrochemical windows, higher processing temperatures, and the choice of new forms of starting reagent. Furthermore, task specific ionic liquids or liquid metal salts, may even be employed to allow extremely high speed deposition. [less ▲] Detailed reference viewed: 245 (4 UL) Tuning the gallium content of metal precursors for Cu(In,Ga)Se2 thin film solar cells by electrodeposition from a deep eutectic solventMalaquias, Joao Corujo Branco ; Regesch, David ; Dale, Phillip et alin Physical Chemistry Chemical Physics (2014), 16 Detailed reference viewed: 201 (8 UL) Three ways to grow faster and better CIGSeDale, Phillip ; Malaquias, Joao Corujo Branco ; Meadows, Helen et alScientific Conference (2013) Detailed reference viewed: 194 (5 UL) Electrodeposition of Cu–In alloys from a choline chloride based deepeutectic solvent for photovoltaic applicationsMalaquias, Joao Corujo Branco ; Steichen, Marc ; Thomassey, Matthieu et alin Electrochimica Acta (2013), 103 Detailed reference viewed: 203 (1 UL) Direct Synthesis of Single-Phase p‑Type SnS by Electrodeposition from a Dicyanamide Ionic Liquid at High Temperature for Thin Film Solar CellsSteichen, Marc ; Djemour, Rabie ; Gütay, Levent et alin The Journal of Physical Chemistry (2013) Detailed reference viewed: 238 (12 UL) Controlled electrodeposition of Cu-Ga from a deep eutectic solvent for low cost fabrication of CuGaSe2 thin film solar cellsSteichen, Marc ; Thomassey, Matthieu ; Siebentritt, Susanne et alin Physical Chemistry Chemical Physics (2011), 13(10), 4292-4302 Detailed reference viewed: 331 (5 UL) Synthesis of trigonal selenium nanorods by electrodeposition from an ionic liquid at high temperatureSteichen, Marc ; Dale, Phillip ![]() in Electrochemistry Communications (2011), 13(8), 865-868 Detailed reference viewed: 196 (0 UL) Preparation of CuGaSe2 absorber layers for thin film solar cells by annealing of efficiently electrodeposited Cu-Ga precursor layers from ionic liquidsSteichen, Marc ; Larsen, Jes K. ; Gütay, Levent et alin Thin Solid Films (2011), 519 Detailed reference viewed: 216 (3 UL) |
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