Over 15% efficient wide-band-gap Cu(In,Ga)S2 solar cell: Suppressing bulk and interface recombination through composition engineering

in Joule (2021), 5

Lifetime, quasi-Fermi level splitting and doping concentration of Cu-rich CuInS2 absorbers

in Materials Research Express (2021), 8

The effect of KF post-deposition treatments on the optoelectronic properties of Cu(In,Ga)Se2 single crystals

in Solar RRL (2021)

The power conversion efficiency boost of Cu(In,Ga)Se2 in the past years has been possible due to the incorporation of heavy alkali atoms. Their addition through post-deposition treatments results in an ... [more ▼]

The power conversion efficiency boost of Cu(In,Ga)Se2 in the past years has been possible due to the incorporation of heavy alkali atoms. Their addition through post-deposition treatments results in an improvement of the open-circuit voltage, which origin has been associated with grain boundaries. The present work discusses the effect of potassium fluoride post-deposition treatments on the optoelectronic properties of a series of sodium-free Cu(In,Ga)Se2 single crystals with varying Cu and Ga content. Results suggest that improvement of the quasi-Fermi level splitting can be achieved despite the absence of grain boundaries, being greater in low-gallium Cu-poor absorbers. Secondary ion mass spectrometry reveals the presence of potassium inside the bulk of the films, suggesting that transport of potassium can occur through grain interiors. In addition, a type inversion from n to p in KF-treated low-gallium Cu(In,Ga)Se2 is observed, which along a carrier lifetime study demonstrates that potassium can act as a dopant. The fact that potassium by its own can alter the optoelectronic properties of Cu(In,Ga)Se2 single crystals demonstrates that the effect of post-deposition treatments goes beyond grain boundary passivation. [less ▲]

Absorber composition: A critical parameter for the effectiveness of heat treatments in chalcopyrite solar cells

in Progress in Photovoltaics (2020)

Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown ... [more ▼]

Post-device heat treatment (HT) in chalcopyrite [Cu(In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown under Cu-poor conditions but not under Cu excess.. We present a systematic study to understand the effects of HT on CuInSe2 and CuInS2 solar cells. The study is performed for CuInSe2 solar cells grown under Cu-rich and Cu-poor chemical potential prepared with both CdS and Zn(O,S) buffer layers. In addition, we also study Cu-rich CuInS2 solar cells prepared with the suitable Zn(O,S) buffer layer. For Cu-poor selenide device low-temperature HT leads to passivation of bulk, whereas in Cu-rich devices no such passivation was observed. The Cu-rich devices are hampered by a large shunt. The HT decreases shunt resistance in Cu-rich selenides, whereas it increases shunt resistance in Cu-rich sulfides.. The origin of these changes in device performance was investigated with capacitance-voltage measurement which shows the considerable decrease in carrier concentration with HT in Cu-poor CuInSe2, and temperature dependent current-voltage measurements show the presence of barrier for minority carriers. Together with numerical simulations, these findings support a highly-doped interfacial p+ layer device model in Cu-rich selenide absorbers and explain the discrepancy between Cu-poor and Curich device performance. Our findings provide insights into how the same treatment can have a completely different effect on the device depending on the composition of the absorber. [less ▲]

Phonon coupling and shallow defects in CuInS2

in Physical Review. B (2020), 101(8), 085119-

Oxidation as Key Mechanism for Efficient Interface Passivation in Cu(In,Ga)Se2 Thin-Film Solar Cells

in Physical Review Applied (2020)

On the chemistry of grain boundaries in CuInS2 film

in Nano Energy (2020), 76

Thin-film (Sb,Bi)2Se3 Semiconducting Layers with Tunable Band Gaps Below 1 eV for Photovoltaic Applications

in Physical Review Applied (2020), 14

Surface characterization of epitaxial Cu-rich CuInSe2 absorbers

in IEEE (2020)

Surface characterization of epitaxial Cu-rich CuInSe2 absorbers

in IEEE Photovoltaic Specialists Conference. Conference Record (2019, July)

We investigated the electrical properties of epitaxial Cu-rich CuInSe 2 by Kelvin probe force microscopy (KPFM) under ambient and ultra-high vacuum conditions. We first measured the sample under ambient ... [more ▼]

We investigated the electrical properties of epitaxial Cu-rich CuInSe 2 by Kelvin probe force microscopy (KPFM) under ambient and ultra-high vacuum conditions. We first measured the sample under ambient conditions before and after potassium cyanide (KCN) etching. In both cases, we do not see any substantial contrast in the surface potential data; furthermore, after the KCN etching we observed outgrowths with a height around 2nm over the sample surface. On the other hand, the KPFM measurements under ultra-high vacuum conditions show a work function dependence according to the surface orientation of the Cu-rich CuInSe 2 crystal. Our results show the possibility to increase the efficiency of epitaxial Cu-rich CuInSe 2 by growing the materials in the appropriated surface orientation where the variations in work function are reduced. [less ▲]