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 Optoelectronic DC and RF behaviour of InAlAs/InGaAs based HEMTs at 1.3µm wavelengthMarso, Michel  ; ; et alin Proceedings of 3rd Asia-Pacific Conference on Communications, Sydney, Australia (1997) Detailed reference viewed: 230 (1 UL)High Bandwidth InP/InGaAs Based MSM-2DEG Diodes For Optoelectronic Application,Marso, Michel ; ; et alin Proceedings of the 9th International Conference on InP and Related Materials (1997) Detailed reference viewed: 117 (0 UL)Demonstration of Nitrogen Carrier Gas in MOVPE For InP/InGaAs-Based High Frequency and Optoelectronic Integrated Devices; Marso, Michel ; et alin Proceedings of the 9th International Conference on InP and Related Materials, Hyannis, Massachusetts, USA (1997) Detailed reference viewed: 118 (0 UL)  0.1 µm T-gate Al-free InP/InGaAs/InP pHEMTs for W-Band Applications Using a Nitrogen Carrier for LP-MOCVD Growth; ; et al in IEEE Electron Device Letters (1997), 18 We report on the dc and RF performance of HEMT’s based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and ... [more ▼] We report on the dc and RF performance of HEMT’s based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and channel composition on the performance of these devices is investigated.We demonstrate that optimum dc and RF performance using highly strained channels can be obtained only if additional composite channels are grown. The cutoff frequencies fT =160 GHz and fmax=260 GHz for a 0.1- um T-gate device indicate the suitability of our devices for W-Band applications. [less ▲] Detailed reference viewed: 1484 (48 UL)16 GHz Bandwidth MSM Photodetector and 45/85 GHz fT/fmax HEMT Prepared on an Identical InGaAs/InP Layer Structure; ; Marso, Michel et alin Electronics Letters (1996), 32 Detailed reference viewed: 207 (0 UL)Simple Realization of a Monolithic Integrated Photoreceiver for 10GBit/s Using an InP/InGaAs Heterostructure; ; et al in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996) Detailed reference viewed: 117 (2 UL)InP-Based Monolithically Integrated Photoreceiver for 4-10Gbit/s Optoelectronic Systems; ; et al in Proceedings of the Gallium Arsenide Application Symposium GAAS 96, Paris, France (1996) Detailed reference viewed: 82 (0 UL)Frequency Response of InP/InGaAs MSM Photodetector with Current Transport Along 2DEG; ; et al in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996) Detailed reference viewed: 117 (0 UL)Monolithic Integrated Photoreceiver for 10GBit/s Systems Prepared on InGaAs/InP 2DEG Structure,; ; Marso, Michel et alin Proceedings of the International Conference on Telecommunications Istanbul, Turkye (1996) Detailed reference viewed: 64 (0 UL)0.2µm T-gate InP/InGaAs/InP pHEMT with InGaP Diffusion Barrier Layer Grown by LP-MOCVD using an N2-Carrier; ; et al in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996) Detailed reference viewed: 1198 (7 UL)Novel MSM-2DEG PD/HEMT Photoreceiver for 10 Gbit/s Operation; ; et al in Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy (1996) Detailed reference viewed: 79 (0 UL)Responsivity Enhancement of InGaAs Based MSM Photodetectors Using 2DEG Layer Sequence and Semitransparent Electrodes; Marso, Michel ; et alin Electronics Letters (1996), 32 The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with ... [more ▼] The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with 2um finger-spacing and finger-width exhibit a dark current density less than 10pA/um2, a breakdown voltage of 45V and a saturation capacitance of 30fF. A DC responsivity of 0.61A/W and a –3dB bandwidth of 8.5GHz were achieved. The electric potential distribution is modified by a 2DEG inserted in the layer structure leading, to improved bandwidth. [less ▲] Detailed reference viewed: 145 (0 UL)InP/GaInAs MSM Photodetector for Simple Integration in HEMT Circuits; Marso, Michel ; et alBook published by Kluver Academic Publishers (1996) Detailed reference viewed: 86 (0 UL)0.2µm T-gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown By LP-MOCVD Using an N2-carrier; ; et al in Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy, 1996 (1996) Detailed reference viewed: 1226 (1 UL)Thermionic Field Emission in p-Barrier enhanced InP/InGaAs/InP HEMTs; ; et al in Electronics Letters (1996), 32(1996), 2132-2133 A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness ... [more ▼] A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness. Good agreement between this model and our experimental data is obtained. [less ▲] Detailed reference viewed: 172 (0 UL)Novel InP/GaInAs Photodetector for Integration in HEMT Circuits; Marso, Michel ; et alin Proceedings of the 25th European Solid State Devices Research Conference, Den Haag, The Netherlands (1995) Detailed reference viewed: 77 (0 UL)Novel HEMT layout: The RoundHEMTMarso, Michel ; ; et alin Electronics Letters (1995), 31(1995), 589-591 Detailed reference viewed: 148 (0 UL) |
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