Transparent conductive CuCrO2 thin films deposited by pulsed injection metal organic chemical vapor deposition: up-scalable process technology for an improved transparency/conductivity trade-off; ; et al in Journal of Materials Chemistry C (2016) Detailed reference viewed: 221 (1 UL) Doping mechanism in pure CuInSe2Werner, Florian ; Colombara, Diego ; Melchiorre, Michele et alin JOURNAL OF APPLIED PHYSICS (2016), 119 Detailed reference viewed: 225 (18 UL) Ordering kesterite improves solar cells:A low temperature post-deposition annealing studyRey, Germain ; Weiss, Thomas ; Sendler, Jan et alin Solar Energy Materials & Solar Cells (2016), 151 Detailed reference viewed: 247 (17 UL) Study on the quasi Fermi level splitting of Cu(In,Ga)Se2 absorber layers with Cu-rich and Cu-poor compositionBabbe, Finn ; Choubrac, Léo ; Siebentritt, Susanne ![]() in IEEE Photovoltaic Specialists Conference. Conference Record (2016) Detailed reference viewed: 147 (5 UL) What is the band gap of kesterite?Siebentritt, Susanne ; Rey, Germain ; Finger, Ashley et alin Solar Energy Materials & Solar Cells (2015) Detailed reference viewed: 247 (7 UL) Highly conductive ZnO films with high near infrared transparencyHala, Matej ; ; Redinger, Alex et alin Progress in Photovoltaics: Research and Applications (2015) We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency ... [more ▼] We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency (RF) biasing of growing ZnO films during their deposition by non-reactive sputtering makes them as conductive as when doped by aluminium (ρ≤1·10−3Ω cm). The films prepared with additional RF biasing possess lower free-carrier concentration and higher free-carrier mobility than Al-doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the near infrared region (NIR). Furthermore, these films exhibit good ambient stability and lower high-temperature stability than the AZO films of the same thickness. We also present the characteristics of Cu(InGa)Se2, CuInSe2 and Cu2ZnSnSe4-based solar cells prepared with the transparent window bilayer formed of the isolating and conductive ZnO films and compare them to their counterparts with a standard ZnO/AZO bilayer. We show that the solar cells with nominally undoped ZnO as their transparent conductive oxide layer exhibit an improved quantum efficiency for λ > 900 nm, which leads to a higher short circuit current density JSC. This aspect is specifically beneficial in preparation of the Cu2ZnSnSe4 solar cells with band gap down to 0.85 eV; our champion device reached a JSC of nearly 39 mAcm−2, an open circuit voltage of 378 mV, and a power conversion efficiency of 8.4 %. [less ▲] Detailed reference viewed: 290 (15 UL)![]() Thin film solar cells – success, challenges and perspectivesSiebentritt, Susanne ![]() Scientific Conference (2015, January 22) Detailed reference viewed: 387 (18 UL) Detection of Cu2Zn5SnSe8 and Cu2Zn6SnSe9 phases in co-evaporated Cu2ZnSnSe4 thin-films; ; et al in Applied Physics Letters (2015), 107 Detailed reference viewed: 163 (3 UL) Detection of a MoSe2 secondary phase layer in CZTSe by spectroscopic ellipsometry; Mousel, Marina ; Redinger, Alex et alin JOURNAL OF APPLIED PHYSICS (2015), 118 Detailed reference viewed: 204 (6 UL) Different Bandgaps in Cu2ZnSnSe4: A High Temperature Coevaporation StudyRedinger, Alex ; Sendler, Jan ; et alin IEEE Journal of Photovoltaics (2015), 5(2), 641-648 We present a high-temperature Cu2ZnSnSe4 coevaporation study, where solar cells with a power conversion efficiency of 7.1 have been achieved. The process is monitored with laser light scattering in order ... [more ▼] We present a high-temperature Cu2ZnSnSe4 coevaporation study, where solar cells with a power conversion efficiency of 7.1 have been achieved. The process is monitored with laser light scattering in order to follow the incorporation of the Sn into the film. We observe the segregation of ZnSe at the Mo/CZTSe interface. Optical analysis has been carried out with photoluminescence and spectrophotometry. We observe strong band tailing and a bandgap, which is significantly lower than in other reported efficient CZTSe absorbers. The photoluminescence at room temperature is lower than the bandgap due to the existence of a large quantity of tail states. Finally, we present effects of low-temperature postannealing of the absorbers on ordering of the Cu/Zn atoms in CZTSe and solar cell parameters. We observe strong changes in all solar cell parameters upon annealing. The efficiency of the annealed devices is significantly reduced, although ordering is improved compared with ones made from nonannealed absorbers. [less ▲] Detailed reference viewed: 152 (1 UL) Cu-rich CuInSe2 solar cells with a Cu-poor surfaceAida, Yasuhiro ; Depredurand, Valérie ; Larsen, Jes K. et alin PROGRESS IN PHOTOVOLTAICS (2015), 23 Detailed reference viewed: 418 (46 UL) Diffuse Electroreflectance of thin-film solar cells: Suppression of interference-related lineshape distortions; ; Redinger, Alex et alin Applied Physics Letters (2015), 107 Detailed reference viewed: 138 (5 UL) Atom probe tomography study of internal interfaces in Cu2ZnSnSe4 thin-films; ; et al in Journal of Applied Physics (2015), 118 Detailed reference viewed: 194 (7 UL) Alternative etchning for improved Cu-rich CuInSe2 solar CellsDepredurand, Valérie ; Bertram, Tobias ; Thevenin, Maxime et alin Materials Research Society Symposia Proceedings. Materials Research Society (2015), 1771 Detailed reference viewed: 116 (10 UL) A comparative study of the annealing behavior of Cu(In, Ga)(S, Se)2 based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatmentsHönes, Christian ; ; et alin Journal of Applied Physics (2015), 117 Detailed reference viewed: 172 (6 UL) Multiple phases of Cu2ZnSnSe4 detected by room temperature photoluminescence (vol 116, 073509, 2014); Redinger, Alex ; et alin JOURNAL OF APPLIED PHYSICS (2015), 118(8), Detailed reference viewed: 71 (1 UL) Epitaxial Cu2ZnSnSe4 thin films and devicesRedinger, Alex ; ; Sendler, Jan et alin THIN SOLID FILMS (2015), 582 Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different ... [more ▼] Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different secondary phases are present in the epitaxial layer. The main secondary phases are Cu2SnSe3 and ZnSe which grow epitaxially on top of the CZTSe. Transmission electron microscopy measurements show that the epitaxial CZTSe grows predominantly parallel to the c-direction. Epitaxial CZTSe solar cells with a maximum power conversion efficiency of 2.1\%, an open-circuit voltage of 223 mV and a current density of 16 mA/cm(2) are presented. (C) 2014 Elsevier B.V. All rights reserved. [less ▲] Detailed reference viewed: 116 (2 UL) The band gap of Cu2ZnSnSe4: Effect of order-disorderRey, Germain ; Redinger, Alex ; Sendler, Jan et alin Applied Physics Letters (2014), 105 Detailed reference viewed: 247 (21 UL)![]() Kesterites - a challenging material for solar cellsSiebentritt, Susanne ![]() Scientific Conference (2014, June 19) Detailed reference viewed: 142 (3 UL)![]() Kesterites - a challenging material for solar cellsSiebentritt, Susanne ![]() Scientific Conference (2014, May) Detailed reference viewed: 132 (4 UL) |
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