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Showing results 41 to 60 of 163
   Potassium fluoride ex-situ treatment on both Cu-rich and Cu-poor CuInSe2 thin film solar cellsElanzeery, Hossam  ; Babbe, Finn ; Melchiorre, Michele et alin IEEE Journal of Photovoltaics (2017), 7(2), 684-689 Detailed reference viewed: 336 (15 UL) A Novel Fast Process for Zn(O,S) Buffer Layers, Doped With Al and B and Deposited on CIGSSe Solar Cells; ; et al in IEEE Journal of Photovoltaics (2017), 7 Detailed reference viewed: 144 (0 UL)Better Cu(In,Ga)Se2 solar cells based on surface treated stoichiometric absorbersChoubrac, Léo ; Bertram, Tobias ; Elanzeery, Hossam et alin Physica Status Solidi A. Applications and Materials Science (2017), 214, No. 1 Detailed reference viewed: 340 (21 UL)On the origin of band-tails in kesteriteRey, Germain ; ; et alin Solar Energy Materials and Solar Cells (2017) Detailed reference viewed: 142 (2 UL)Improved environmental stability of highly conductive nominally undoped ZnO layers suitable for n-type windows in thin film solar cellsHala, Matej ; ; et alin Solar Energy Materials & Solar Cells (2017), 161 Detailed reference viewed: 325 (13 UL)What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se2 ?Werner, Florian ; Bertram, Tobias ; et alin Thin Solid Films (2017), 633 Detailed reference viewed: 212 (9 UL)Innovation highway: Breakthrough milestones and key evelopments in chalcopyrite photovoltaics from a retrospective viewpoint; ; et al in Thin Solid Films (2017), 633 Detailed reference viewed: 253 (5 UL)Chalcopyrite compound semiconductors for thin film solar cellsSiebentritt, Susanne in Current Opinion in Green and Sustainable Chemistry (2017) Detailed reference viewed: 249 (5 UL)Space-charge-limited currents in CIS-based solar cellsZelenina, Anastasiya ; Werner, Florian ; Elanzeery, Hossam et alin Applied Physics Letters (2017), 111 Detailed reference viewed: 179 (11 UL)Correcting for interference effects in the photoluminescence of Cu(In,Ga)Se2 thin filmsWolter, Max ; ; et alin Physica Status Solidi C. Current Topics in Solid State Physics (2017), 14, no 6 Detailed reference viewed: 217 (12 UL)Post-deposition treatment of Cu2ZnSnSe4 with alkalisRey, Germain ; Babbe, Finn ; Weiss, Thomas et alin Thin Solid Films (2016), 633 Low temperature post-deposition treatment of Cu2ZnSnSe4 with NaF and KF significantly improved the solar cell efficiency (from 6.4% to 7.8% and 7.7% on average, respectively) due to enhanced fill factor ... [more ▼] Low temperature post-deposition treatment of Cu2ZnSnSe4 with NaF and KF significantly improved the solar cell efficiency (from 6.4% to 7.8% and 7.7% on average, respectively) due to enhanced fill factor (from 0.58 to 0.61 and 0.62), open-circuit voltage (Voc) (from 314 mV to 337 mV and 325 mV) and short-circuit current density (from 35.3 mA⋅cm −2 to 38.3 mA⋅cm −2 and 38.6 mA⋅cm −2). Voc improvement was higher for solar cells with NaF treatment due to an increase in radiative efficiency at room temperature and shallower defect activation energy as determined by photoluminescence (PL) and temperature dependent admittance spectroscopy, respectively. In the case of KF treatment, red-shift of the PL, higher band tail density of state and donor activation energy deeper in the band gap were limiting further improvement of the Voc compared to NaF treatment. [less ▲] Detailed reference viewed: 203 (10 UL)Impact of annealing on electrical properties of Cu2ZnSnSe4 absorber layersWeiss, Thomas ; Redinger, Alex ; Rey, Germain et alin Journal of Applied Physics (2016), 120 Detailed reference viewed: 188 (10 UL)Revisiting radiative deep-level transitions in CuGaSe2 by photoluminescenceSpindler, Conrad ; Siebentritt, Susanne ; Regesch, David in Applied Physics Letters (2016), 109 Detailed reference viewed: 227 (22 UL)Electrical Characterization of Defects in Cu-Rich Grown CuInSe2 Solar CellsBertram, Tobias ; ; Siebentritt, Susanne in IEEE Journal of Photovoltaics (2016), 6(2), 546-551 We study defects in CuInSe2 (CIS) grown under Cu-excess. Samples with different Cu/In and Se/metals flux ratios were characterized by thermal admittance spectroscopy (TAS), capacitance-voltage ... [more ▼] We study defects in CuInSe2 (CIS) grown under Cu-excess. Samples with different Cu/In and Se/metals flux ratios were characterized by thermal admittance spectroscopy (TAS), capacitance-voltage measurements (CV) and temperature dependent current voltage measurements (IVT). All samples showed two different capacitance responses, which we attribute to defects with energies around 100 and 220 meV. Plus the beginning of an additional step that we attribute to a freeze-out effect. By application of the Meyer-Neldel rule, the parameters of the two defects can be assigned to two different groups, both lying within the energy region of the so-called ‘N1-defect’ that has been observed for Cu-poor absorbers. [less ▲] Detailed reference viewed: 282 (7 UL)Is the Cu/Zn disorder the main culprit for the voltage deficit in kesterite solar cells?; ; et al in Advanced Energy Materials (2016), 6 - 15002276 Detailed reference viewed: 198 (1 UL)Cu–Zn disorder and band gap fluctuations in Cu2ZnSn(S,Se)4: Theoretical and experimental investigations; Larsen, Jes K. ; et alin Physica Status Solidi B. Basic Research (2016), 253(2), 247-254 Detailed reference viewed: 163 (1 UL)Ordering kesterite improves solar cells:A low temperature post-deposition annealing studyRey, Germain ; Weiss, Thomas ; Sendler, Jan et alin Solar Energy Materials & Solar Cells (2016), 151 Detailed reference viewed: 247 (17 UL)Transparent conductive CuCrO2 thin films deposited by pulsed injection metal organic chemical vapor deposition: up-scalable process technology for an improved transparency/conductivity trade-off; ; et al in Journal of Materials Chemistry C (2016) Detailed reference viewed: 221 (1 UL)Environmental stability of highly conductive nominally undoped ZnO layersHala, Matej ; ; et alin IEEE Photovoltaic Specialists Conference. Conference Record (2016), 978-1-5090-2724 Detailed reference viewed: 176 (6 UL)Photoluminescence studies in epitaxial CZTSe thin filmsSendler, Jan ; Thevenin, Maxime ; Werner, Florian et alin Journal of Applied Physics (2016), 120 Detailed reference viewed: 227 (6 UL) |
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