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Showing results 181 to 197 of 197
   Overgrown PBT's: Calculations and Measurements; Marso, Michel  ; in IEEE Transactions on Electron Devices (1994), 41(1994), 751-760 The device parameters of overgrown silicon permeable base transistors (PBT’s) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some ... [more ▼] The device parameters of overgrown silicon permeable base transistors (PBT’s) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some design rules arise for optimizing the high frequency performance of PBT’s. The calculations indicate the source-drain distance as the essential PBT parameter, which should be kept below 200 nm in order to expect unity current- gain frequencies fT over 50 GHz. In addition, PBT’s with buried monocrystalline CoSiz -gates have been fabricated by high dose cobalt ion implantation through a grid-like mask into MOS-compatible n -type Si(lO0). Measurements revealed a transconductance of 70 mS/mm and a fT value of 6 GHz. The comparison between measured and simulated output characteristics shows good agreement. [less ▲] Detailed reference viewed: 133 (0 UL)Schottky Barriers and Ohmic Contacts on InGaAs, Properties of Lattice-matched and strained InGaAs; Marso, Michel in EMS Datareviews (1993), (INSPEC IEE London), 131-155 Detailed reference viewed: 124 (0 UL)Submicrometer Silicon Permeable Base Transistors with Buried CoSi2 Gates; ; Marso, Michel et alin Electronics Letters (1993), 29(1993), 215-217 Detailed reference viewed: 106 (0 UL)A Novel InGaAs Schottky-2DEG DiodeMarso, Michel ; ; et alin Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (1993) Detailed reference viewed: 223 (0 UL)Optimization of Strained Ga1-xInxAs/InP Heterostructures Towards High Channel Conductivity for HEMT Application; ; et al in Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (1993) Detailed reference viewed: 155 (0 UL)Schottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfacial Layers,; Marso, Michel ; et alin IEEE Transactions on Electron Devices (1992), 39(1992), 1970-1972 Detailed reference viewed: 129 (0 UL)Enhancement of the Schottky Barrier Height on n-InGaAs by Thin InP Interlayers; Marso, Michel ; in Journal of Electrical Engineering (1992), 44(1992), 367-371 Detailed reference viewed: 130 (1 UL)Schottky Barrier Height Enhancement on n-In0.53Ga0.47As; Marso, Michel ; et alin Journal of Applied Physics (1992), 72(1992), 2347-2355 Detailed reference viewed: 99 (0 UL)Enhanced Schottky Barriers on n-In.53Ga.47As Using pInGaAs, GaAs, InP and InGaP Surface layers; Marso, Michel ; et alin Proceedings of the 4th International Conference on InP and Related Compounds, Newport, Rhode Island, USA (1992) Detailed reference viewed: 106 (0 UL)n-InGaAs Schottky Diode with Current Transport along 2DEG Channel; Marso, Michel ; et alin Electronics Letters (1992), 28(1992), 1689-1690 Detailed reference viewed: 232 (0 UL)Barrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique; Marso, Michel ; et alin Electronics Letters (1991), 27(1991), 1759-1760 Detailed reference viewed: 177 (0 UL)Quasi-Schottky Diodes on (n)In.53Ga.47As With Barrier Heights of 0.6eVMarso, Michel ; ; et alin Proceedings of the the MRS Fall Meeting, Symposium E, Boston, MA, USA (1991) Detailed reference viewed: 240 (0 UL)GaInAs Camel transistors With Current Gain Above 6 at Room TemperatureMarso, Michel ; ; et alin Electronics Letters (1991), 27(1991), 335-337 Detailed reference viewed: 209 (0 UL)GaInAs Camel Transistors Grown by MOCVDMarso, Michel ; ; in Electronics Letters (1989), 25(1989), 1462-1463 Detailed reference viewed: 198 (0 UL)GaInAs camel diodes grown by MBEMarso, Michel ; ; et alin Proceedings of the 18th European Solid State Device Research Conference (ESSDERC 88), Montpellier, France, 1988, J. de Physique, Colloque C4, suppl. 9 (1988) Detailed reference viewed: 202 (0 UL)Low-Noise Bulk Unipolar Devices in Si and GaAs; ; et al in Proceedings of the 17th European Solid State Devices Research Conference, Bologna, Italy (1987) Detailed reference viewed: 143 (0 UL)Silicon Bulk Barrier Diodes Fabricated by LPVPE, High Speed Electronics; ; et al Book published by Springer (1986) Detailed reference viewed: 119 (0 UL) |
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