[en] we present a new way to tune the electron phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K acquires a strong dependency on the doping level due to electron electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multilayer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through external control of the EPC.
Disciplines :
Physics
Author, co-author :
Attaccalite, Claudio; Institut NEEL, CNRS-UJF, Grenoble, France / Nano-Bio Spectroscopy group and ETSF Scientific Development Centre, Dpto. Fisica de Materiales, Universidad del Pais Vasco, San Sebastian, Spain
Wirtz, Ludger ; Centre National de la Recherche Scientifique - CNRS > UMR 8520, Dept. ISEN > Istitute for Electronics, Microelectronics and Nanotechnology
Lazzeri, Michele; Universités Paris 6 et 7 > IMPMC
Mauri, Francesco; Universités Paris 6 et 7 > IMPMC
Rubio, Angel; Nano-Bio Spectroscopy group and ETSF Scientific Development Centre, Universidad del Pais Vasco, San Sebastian, Spain / Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany
Language :
English
Title :
Doped Graphene as Tunable Electron-Phonon Coupling Material
Publication date :
2010
Journal title :
Nano Letters
ISSN :
1530-6992
Publisher :
American Chemical Society, Washington, United States - District of Columbia
