Article (Scientific journals)
GaInAs Camel transistors With Current Gain Above 6 at Room Temperature
Marso, Michel; Zwinge, G.; Grützmacher, D. et al.
1991In Electronics Letters, 27 (1991), p. 335-337
Peer reviewed
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-324
Author, co-author :
Marso, Michel ;  nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany
Zwinge, G.;  nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany
Grützmacher, D.;  nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany
Hergeth, J.;  nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany
Beneking, H.;  nstitut für Halbleitertechnik, Sommerfeldstraße, D-5100 Aachen, Germany
External co-authors :
yes
Language :
English
Title :
GaInAs Camel transistors With Current Gain Above 6 at Room Temperature
Publication date :
1991
Journal title :
Electronics Letters
ISSN :
0013-5194
Publisher :
Institution of Engineering & Technology
Volume :
27
Issue :
1991
Pages :
335-337
Peer reviewed :
Peer reviewed
Available on ORBilu :
since 06 April 2015

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