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0.2µm T-gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown By LP-MOCVD Using an N2-carrier
Schimpf, K.; Hollfelder, M.; Horstmann, M. et al.
1996In Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy, 1996
 

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Disciplines :
Electrical & electronics engineering
Author, co-author :
Schimpf, K.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Hollfelder, M.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Horstmann, M.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Marso, Michel ;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Hardtdegen;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Kordos, P.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
0.2µm T-gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown By LP-MOCVD Using an N2-carrier
Publication date :
1996
Event name :
26th European Solid State Devices Research Conference, Bologna, Italy, 1996
Event date :
1996
Main work title :
Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy, 1996
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