Optoelectronic DC and RF behaviour of InAlAs/InGaAs based HEMTs at 1.3µm wavelength

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Marso, Michel; Fox, A.; Förster, A. et al.

1997 • In Proceedings of 3rd Asia-Pacific Conference on Communications, Sydney, Australia, p. 546-550

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https://hdl.handle.net/10993/20675

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Disciplines :

Electrical & electronics engineering

Identifiers :

UNILU:UL-CONFERENCE-2009-415

Author, co-author :

Marso, Michel ; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Fox, A.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Förster, A.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Schimpf, K.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

Kordos, P.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany

External co-authors :

yes

Language :

English

Title :

Optoelectronic DC and RF behaviour of InAlAs/InGaAs based HEMTs at 1.3µm wavelength

Publication date :

1997

Event name :

3rd Asia-Pacific Conference on Communications, Sydney, Australia

Event date :

2007

Journal title :

Proceedings of 3rd Asia-Pacific Conference on Communications, Sydney, Australia

Pages :

546-550

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