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Paper published in a book (Scientific congresses, symposiums and conference proceedings)
Material and Device Issues of GaN-based HEMTs
Kordoš, P.; Alam, A.; Betko, J. et al.
2000 • In Proceedings of the 8th International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO),
Permalink
https://hdl.handle.net/10993/20648
DOI
10.1109/EDMO.2000.919030
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-400
Author, co-author :
Kordoš, P.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Alam, A.;  AIXTRON AG, D-52072 Aachen, Germany
Betko, J.
Chow, P. P.
Heuken, M.;  AIXTRON AG, D-52072 Aachen, Germany
Javorka, P.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Kočan, M.;  Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Marso, Michel ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit
Morvic, M.
van Hove, J. M.
External co-authors :
yes
Language :
English
Title :
Material and Device Issues of GaN-based HEMTs
Publication date :
2000
Event name :
8th International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO),
Event date :
2000
Main work title :
Proceedings of the 8th International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO),
Pages :
61-66
Available on ORBilu :
since 28 March 2015

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