Article (Scientific journals)
AlGaN/GaN Round-HEMTs on (111) silicon substrates
Javorka, P.; Alam, A.; Nastase, N. et al.
2001In Electronics Letters, 37 (2001), p. 1364-1366
Peer reviewed
 

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Abstract :
[en] AlGaN/GaN Round-HEMTs on silicon substrates have been realised and their static characteristics investigated. The AlGaN/GaN (x = 0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices with 0.3 mm gate length exhibit a saturation current of 0.82 A/mm, a good pinch-off and a peak extrinsic transconductance of 110 mS/mm. Highest saturation current reported so far and static output characteristics up to 20 V demonstrate that the devices are capable of handling 16 W/mm of static heat dissipation without any degradation of their performance.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-297
Author, co-author :
Javorka, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Alam, A.;  AIXTRON AG, D-52072 Aachen, Germany
Nastase, N.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Marso, Michel ;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Hardtdegen, H.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Heuken, M.;  AIXTRON AG, D-52072 Aachen, Germany
Lüth, H.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
AlGaN/GaN Round-HEMTs on (111) silicon substrates
Publication date :
2001
Journal title :
Electronics Letters
ISSN :
0013-5194
Publisher :
Institution of Engineering & Technology
Volume :
37
Issue :
2001
Pages :
1364-1366
Peer reviewed :
Peer reviewed
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