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Varactor Diodes based on an AlGaN/GaN HEMT layer structure
Marso, Michel; Wolter, M.; Bernát, J. et al.
2001In EProc. EDMO
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-428
Author, co-author :
Marso, Michel ;  University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit ; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Wolter, M.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Bernát, J.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Javorka, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Fox, A.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
Varactor Diodes based on an AlGaN/GaN HEMT layer structure
Publication date :
2001
Event name :
EDMO
Event date :
2001
Journal title :
EProc. EDMO
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