Vertical Double-Gate MOSFET Based on Epitaxial Growth

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Paper published in a journal (Scientific congresses, symposiums and conference proceedings)

Moers, J.; Trellenkamp, St; Vescan, L. et al.

2001 • In Proceedings of the 31st European Solid State Devices Research Conference, Nürnberg, Germany, p. 191-194

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https://hdl.handle.net/10993/20633

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Disciplines :

Electrical & electronics engineering

Identifiers :

UNILU:UL-CONFERENCE-2009-429

Author, co-author :

Moers, J.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

Trellenkamp, St; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

Vescan, L.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

Marso, Michel ; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

Kordoš, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

Lüth, H.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

External co-authors :

yes

Language :

English

Title :

Vertical Double-Gate MOSFET Based on Epitaxial Growth

Publication date :

2001

Event name :

31st European Solid State Devices Research Conference, Nürnberg, Germany

Event date :

2001

Journal title :

Proceedings of the 31st European Solid State Devices Research Conference, Nürnberg, Germany

Pages :

191-194

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