Article (Scientific journals)
Photoionization spectroscopy of traps in AlGaN/GaN HEMTs
Wolter, M.; Javorka, P.; Marso, Michel et al.
2002In Journal of Electronic Materials, 31 (12), p. 1321-1324
Peer reviewed
 

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Keywords :
photo-ionization spectroscopy
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-362
Author, co-author :
Wolter, M.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Javorka, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Marso, Michel ;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Fox, A.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Carius, R.;  Institute of Photovoltaics, Research Centre Jülich, D-52425 Jülich, Germany
Alam, A.;  AIXTRON AG, D-52072 Aachen, Germany
Heuken, H.;  AIXTRON AG, D-52072 Aachen, Germany
Lüth, H.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
Photoionization spectroscopy of traps in AlGaN/GaN HEMTs
Publication date :
2002
Journal title :
Journal of Electronic Materials
ISSN :
0361-5235
Publisher :
Springer Science & Business Media B.V.
Volume :
31
Issue :
12
Pages :
1321-1324
Peer reviewed :
Peer reviewed
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