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Vertical Double-Gate MOSFETs
Moers, J.; Trellenkamp, St; Marso, Michel et al.
2004In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-430
Author, co-author :
Moers, J.;  Institute of Thin Films and Interfaces (ISG1), Research Centre Jülich, 52425 Jülich, Germany
Trellenkamp, St;  Institute of Thin Films and Interfaces (ISG1), Research Centre Jülich, 52425 Jülich, Germany
Marso, Michel ;  Institute of Thin Films and Interfaces (ISG1), Research Centre Jülich, 52425 Jülich, Germany
v.d.Hart, A.;  Institute of Thin Films and Interfaces (ISG1), Research Centre Jülich, 52425 Jülich, Germany
Mantl, S.;  Institute of Thin Films and Interfaces (ISG1), Research Centre Jülich, 52425 Jülich, Germany
Lüth, H.;  Institute of Thin Films and Interfaces (ISG1), Research Centre Jülich, 52425 Jülich, Germany
Kordoš, P.;  Institute of Thin Films and Interfaces (ISG1), Research Centre Jülich, 52425 Jülich, Germany
Language :
English
Title :
Vertical Double-Gate MOSFETs
Publication date :
2004
Event name :
5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04
Event date :
2004
Main work title :
Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04
ISBN/EAN :
0-7803-8535-7
Pages :
215-218
Commentary :
5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04
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since 21 March 2015

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