Paper published in a journal (Scientific congresses, symposiums and conference proceedings)
Fabrication and performance of hybrid photoconductive devices based on freestanding LT-GaAs, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII,
Adam, R.; Mikulics, M.; Wu, S. et al.
2004In Proceedings of SPIE, 5353 (2004), p. 321-332
 

Files


Full Text
111_SPIE_5352_2004_321_332.pdf
Publisher postprint (226.15 kB)
Request a copy

All documents in ORBilu are protected by a user license.

Send to



Details



Keywords :
low-temperature-grown GaAs; photoconductive switch; femtosecond carrier dynamics; optoelectronics; electro-optic sampling; photomixing
Abstract :
[en] We report on fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs (LT-GaAs). In our experiments, the LT-GaAs/AlAs bilayers were grown on 2-inch diameter, semi-insulating GaAs wafers by a molecular beam epitaxy. Next, the bilayer was patterned to form 10 × 10 μm2 to 150 × 150 μm2 structures using photolithography and ion beam etching. The AlAs layer was then selectively etched in diluted HF solution, and the LT-GaAs device was lifted from its substrate and transferred on top of a variety of substrates including Si, MgO/YBaCuO, Al2O3, and a plastic foil. Following the transfer, metallic coplanar transmission lines were fabricated on top of the LT-GaAs structure, forming a metal semiconductor-metal photodetectors or photomixer structures. Our freestanding devices exhibited above 200 V breakdown voltages and dark currents at 100 V below 3×10-7 A. Device photoresponse was measured using an electro-optic sampling technique with 100-fs-wide laser pulses at wavelengths of 810 nm and 405 nm as the excitation source. For 810-nm excitation, we measured 0.55 ps-wide electrical transients with voltage amplitudes of up to 1.3 V. The signal amplitude was a linear function of the applied voltage bias, as well as a linear function of the laser excitation power, below well-defined saturation thresholds. Output power from the freestanding photomixers was measured with two beam laser illumination experimental setup. Reported fabrication technique is suitable for the LT-GaAs integration with a range of semiconducting, superconducting, and organic materials for high-frequency hybrid optoelectronic applications.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-379
Author, co-author :
Adam, R.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Mikulics, M.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany, and Max-Planck-Institute for Radioastronomy, D-53121 Bonn, Germany
Wu, S.
Zheng, X.
Marso, Michel ;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Camara, I.;  Max-Planck-Institute for Radioastronomy, D-53121 Bonn, Germany
Siebel, F.;  Max-Planck-Institute for Radioastronomy, D-53121 Bonn, Germany
Güsten, R.;  Max-Planck-Institute for Radioastronomy, D-53121 Bonn, Germany
Förster, A.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Sobolewski, R.;  Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester
Language :
English
Title :
Fabrication and performance of hybrid photoconductive devices based on freestanding LT-GaAs, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII,
Publication date :
2004
Event name :
SPIE
Event date :
2004
Journal title :
Proceedings of SPIE
ISSN :
1996-756X
Publisher :
International Society for Optical Engineering, Bellingham, United States - Washington
Volume :
5353 (2004)
Pages :
321-332
Available on ORBilu :
since 21 March 2015

Statistics


Number of views
91 (0 by Unilu)
Number of downloads
0 (0 by Unilu)

Bibliography


Similar publications



Contact ORBilu