Article (Scientific journals)
GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation
Mikulics, Martin; Marso, Michel; Mantl, Siegfried et al.
2006In Applied Physics Letters, 89
Peer reviewed
 

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Abstract :
[en] The authors report on the fabrication and characterization of photodetectors based on nitrogen-ion-implanted GaAs and the annealing dynamics in these devices. An energy of 400 keV was used to implant N ions in a GaAs substrate at an ion concentration of 1 1016 cm−2. Dark current measurements as well as measurements under illumination show that the material properties rapidly change during the annealing process. Photodetectors based on nitrogen-implanted GaAs materials with annealing temperatures up to 400 °C exhibit a subpicosecond carrier lifetime up to 0.6 ps. These properties make nitrogen-ion-implanted GaAs an ideal material for ultrafast photodetectors, as alternative to low-temperature-grown GaAs.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-322
Author, co-author :
Mikulics, Martin;  Institute of Bio- and Nanosystems, Research Centre Jülich, D-52425 Jülich, Germany, and Institut für Hochfrequenztechnik, Technische Universität Braunschweig, Schleinitzstraße 22, D-38106 Braunschweig, Germany
Marso, Michel ;  Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Mantl, Siegfried;  Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Lüth, Hans;  Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Kordoš, Peter;  Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic, and Institute of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic
Language :
English
Title :
GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation
Publication date :
2006
Journal title :
Applied Physics Letters
ISSN :
0003-6951
Publisher :
American Institute of Physics, Melville, United States - New York
Volume :
89
Peer reviewed :
Peer reviewed
Available on ORBilu :
since 17 March 2015

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