Article (Scientific journals)
An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure
Marso, Michel; Fox, A.; Heidelberger, G. et al.
2006In Physica Status Solidi C. Current Topics in Solid State Physics, 3 (6), p. 2261-2264
Peer reviewed
 

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Abstract :
[en] The optoelectronic properties of MSM diodes that are based on an AlGaN/GaN HEMT layer system are investigated as function of the applied bias. For low voltages, the two-dimensional electron gas acts as a barrier for the depletion layer. Therefore, only the upper AlGaN barrier layer contributes to the photocurrent. In the high voltage regime the depletion region penetrates the GaN buffer that adds the spectral responsivity of GaN to the pure AlGaN behaviour in the low voltage regime. The ratio of the responsivities at 350 nm and 300 nm wavelength can be switched from 0.01 at 2.5 V to 0.8 at 4 V bias. This property makes the MSM-2DEG a candidate for use as two-color photodetector. Device fabrication uses standard HEMT processing steps, allowing integration in HEMT circuits without the need of sophisticated growth or etching techniques.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-298
Author, co-author :
Marso, Michel ;  Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Fox, A.;  Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Heidelberger, G.;  Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Bernát, J.;  Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Lüth, H.;  Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Language :
English
Title :
An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure
Publication date :
2006
Journal title :
Physica Status Solidi C. Current Topics in Solid State Physics
ISSN :
1862-6351
eISSN :
1610-1634
Publisher :
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume :
3
Issue :
6
Pages :
2261-2264
Peer reviewed :
Peer reviewed
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