[en] In this letter we report on spectral photoconductivity (PC) on different sections of single MBE-grown GaN nanowhiskers of diameters ranging on the order of 100 nm. The photoconductivity spectra show, besides the band-gap related transition, deep-levels corresponding to the yellow, green, and blue bands. A strong spatial localization of specific photocurrent peaks has been observed, indicating that the defects responsible for such transitions are distributed inhomogeneously along the column growth direction.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-310
Author, co-author :
Cavallini, Anna; Physics Department, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
Polenta, Laura; Physics Department, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
Rossi, Marco; Physics Department, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
Richter, Thomas; Institute of Thin Films and Interfaces (ISG1) and cni - Centre of Nanoelectronic Systems for Information Technology, Research Center Julich
Marso, Michel ; Institute of Thin Films and Interfaces (ISG1) and cni - Centre of Nanoelectronic Systems for Information Technology, Research Center Julich
Meijers, Ralph; Institute of Thin Films and Interfaces (ISG1) and cni - Centre of Nanoelectronic Systems for Information Technology, Research Center Julich
Calarco, Raffaella; Institute of Thin Films and Interfaces (ISG1) and cni - Centre of Nanoelectronic Systems for Information Technology, Research Center Julic
Lüth, Hans; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
