[en] We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors with recessed electrodes, based on low-temperature-grown GaAs. The new recessed-electrode MSM geometry led to an improved electric-field distribution inside the photodetector structure and resulted in a 25% breakdown voltage and sensitivity increase with simultaneous four-fold reduction of capacitance, as compared to the identical MSM devices with planar electrodes. Time-resolved studies performed using 100-fs-duration laser pulses showed that recessed-electrode MSMs exhibited 1.0-ps-wide photoresponse transients with no slow after-pulse tails and their photoresponse time was 0.9 ps. The improved transient photoresponse parameters are the main advantages of the recessed-electrode geometry.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-382
Author, co-author :
Mikulics, M.; Max-Plank-Institute for Radioastronomy, D-53121Bonn, Germany, and Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany, and Institut fuer Hochfrequenztechnik,Technische Universitaet Braunschweig, D-38106 Braunschweig,
Wu, S.; Department of Physics and Astronomy and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231 USA
Marso, Michel ; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Adam, R.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Förster, A.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
van der Hart, A.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Lüth, H.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Sobolewski, Roman; Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester
Language :
English
Title :
Ultrafast and Highly-Sensitive Photodetectors with Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs
Publication date :
2006
Journal title :
IEEE Photonics Technology Letters
ISSN :
1041-1135
eISSN :
1941-0174
Publisher :
Institute of Electrical and Electronics Engineers, New York, United States - New York
