[en] We have fabricated and characterized metal–semiconductor–metal (MSM) photodetectors based on lowtemperature-grown GaAs with alloyed (i.e., ohmic-type) contacts. The annealed contacts optimize the electric field distribution inside the photodetector structure which results in an up-to-200% responsivity increase of the devices, compared to conventional MSM detectors with standard nonalloyed (Schottky-type) metallization fabricated on identical material. The improved MSM device with alloyed contacts shows more than three times larger output amplitude at illumination with a 100-fs Ti : sapphire laser, compared to the nonalloyed devices, without degradation of detector speed.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-240
Author, co-author :
Mikulics, M. ; Institute of Bio- and Nanosystems, Center of Nanoelectronic Systems for Information Technology (CNI), D-52425 Jülich, Germany
Marso, Michel ; Institute of Bio- and Nanosystems, Center of Nanoelectronic Systems for Information Technology (CNI), D-52425 Jülich, Germany
Wu, S.; Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627, USA
Fox, A.; Institute of Bio- and Nanosystems, Center of Nanoelectronic Systems for Information Technology (CNI), D-52425 Jülich, Germany
Lepsa, M.
Grützmacher, D.; Institute of Bio- and Nanosystems, Center of Nanoelectronic Systems for Information Technology (CNI), D-52425 Jülich, Germany
Sobolewski, R.; Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627, USA
Kordoš, P.; Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic, and Department of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic
Language :
English
Title :
Sensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts
Publication date :
15 June 2008
Journal title :
IEEE Photonics Technology Letters
ISSN :
1041-1135
eISSN :
1941-0174
Publisher :
Institute of Electrical and Electronics Engineers, New York, United States - New York
